Abstract
We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GalnP/GaAs/GalnAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ∼1-eV bottom subcell in the tandem affords an ∼300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12% over the current state of the art. Recent performance results and advanced design options are discussed.
Original language | American English |
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Pages | Vol. 2: 729-732 |
Number of pages | 4 |
DOIs | |
State | Published - 2006 |
Event | 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006 |
Conference
Conference | 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 |
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Country/Territory | United States |
City | Waikoloa, HI |
Period | 7/05/06 → 12/05/06 |
NREL Publication Number
- NREL/CP-520-40276