Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

Mark Wanlass, Phil Ahrenkiel, David Albin, Jeff Carapella, Anna Duda, Keith Emery, Daniel Friedman, John Geisz, Kim Jones, Alan Kibbler, James Kiehl, Sarah Kurtz, William McMahon, Tom Moriarty, Jerry Olson, Aaron Ptak, Manuel Romero, Scott Ward

Research output: Contribution to conferencePaperpeer-review

36 Scopus Citations

Abstract

We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GalnP/GaAs/GalnAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ∼1-eV bottom subcell in the tandem affords an ∼300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12% over the current state of the art. Recent performance results and advanced design options are discussed.

Original languageAmerican English
PagesVol. 2: 729-732
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 7 May 200612 May 2006

Conference

Conference2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/TerritoryUnited States
CityWaikoloa, HI
Period7/05/0612/05/06

NREL Publication Number

  • NREL/CP-520-40276

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