Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

Mark Wanlass; Phil Ahrenkiel; David Albin; Jeff Carapella; Anna Duda; Keith Emery; Daniel Friedman; John Geisz; Kim Jones; Alan Kibbler; James Kiehl; Sarah Kurtz; William McMahon; Tom Moriarty; Jerry Olson; Aaron Ptak; Manuel Romero; Scott Ward

doi:10.1109/WCPEC.2006.279559

Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

Mark Wanlass
, Phil Ahrenkiel
, David Albin
, Jeff Carapella
, Anna Duda
, Keith Emery
, Daniel Friedman
, John Geisz
, Kim Jones
, Alan Kibbler
, James Kiehl
, Sarah Kurtz
, William McMahon
, Tom Moriarty
, Jerry Olson
, Aaron Ptak
, Manuel Romero
, Scott Ward

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

36 Scopus Citations

Abstract

We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GalnP/GaAs/GalnAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ∼1-eV bottom subcell in the tandem affords an ∼300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12% over the current state of the art. Recent performance results and advanced design options are discussed.

Original language	American English
Pages	Vol. 2: 729-732
Number of pages	4
DOIs	https://doi.org/10.1109/WCPEC.2006.279559 https://doi.org/10.1109/WCPEC.2006.279559
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

NLR Publication Number

NREL/CP-520-40276

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Wanlass, M., Ahrenkiel, P., Albin, D., Carapella, J., Duda, A., Emery, K., Friedman, D., Geisz, J., Jones, K., Kibbler, A., Kiehl, J., Kurtz, S., McMahon, W., Moriarty, T., Olson, J., Ptak, A., Romero, M., & Ward, S. (2006). Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells. Vol. 2: 729-732. Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States. https://doi.org/10.1109/WCPEC.2006.279559, https://doi.org/10.1109/WCPEC.2006.279559

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title = "Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells",

abstract = "We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GalnP/GaAs/GalnAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ∼1-eV bottom subcell in the tandem affords an ∼300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12\% over the current state of the art. Recent performance results and advanced design options are discussed.",

author = "Mark Wanlass and Phil Ahrenkiel and David Albin and Jeff Carapella and Anna Duda and Keith Emery and Daniel Friedman and John Geisz and Kim Jones and Alan Kibbler and James Kiehl and Sarah Kurtz and William McMahon and Tom Moriarty and Jerry Olson and Aaron Ptak and Manuel Romero and Scott Ward",

year = "2006",

doi = "10.1109/WCPEC.2006.279559",

language = "American English",

pages = "Vol. 2: 729--732",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

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Wanlass, M, Ahrenkiel, P, Albin, D, Carapella, J, Duda, A, Emery, K , Friedman, D , Geisz, J, Jones, K, Kibbler, A, Kiehl, J, Kurtz, S , McMahon, W, Moriarty, T, Olson, J, Ptak, A, Romero, M & Ward, S 2006, 'Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells', Paper presented at 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 7/05/06 - 12/05/06 pp. Vol. 2: 729-732. https://doi.org/10.1109/WCPEC.2006.279559, https://doi.org/10.1109/WCPEC.2006.279559

TY - CONF

T1 - Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

AU - Wanlass, Mark

AU - Ahrenkiel, Phil

AU - Albin, David

AU - Carapella, Jeff

AU - Duda, Anna

AU - Emery, Keith

AU - Friedman, Daniel

AU - Geisz, John

AU - Jones, Kim

AU - Kibbler, Alan

AU - Kiehl, James

AU - Kurtz, Sarah

AU - McMahon, William

AU - Moriarty, Tom

AU - Olson, Jerry

AU - Ptak, Aaron

AU - Romero, Manuel

AU - Ward, Scott

PY - 2006

Y1 - 2006

N2 - We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GalnP/GaAs/GalnAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ∼1-eV bottom subcell in the tandem affords an ∼300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12% over the current state of the art. Recent performance results and advanced design options are discussed.

AB - We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GalnP/GaAs/GalnAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ∼1-eV bottom subcell in the tandem affords an ∼300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12% over the current state of the art. Recent performance results and advanced design options are discussed.

UR - https://www.scopus.com/pages/publications/41749118708

U2 - 10.1109/WCPEC.2006.279559

DO - 10.1109/WCPEC.2006.279559

M3 - Paper

AN - SCOPUS:41749118708

SP - Vol. 2: 729-732

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

Abstract

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