Monolithically Interconnected Silicon-Film(TM) Module Technology: Annual Technical Report, 25 November 1997-- 24 November 1998

Research output: NRELSubcontract Report

Abstract

AstroPower continued its development of an advanced thin-silicon-based photovoltaic module product. This module combines the performance advantages of thin, light-trapped silicon layers with the capability of integration into a low-cost, monolithically interconnected array. This report summarizes the work carried out over the first year of a three-year, cost-shared contract, which has yielded thefollowing results: a) Development of a low-cost, insulating, ceramic substrate that provides mechanical support at silicon growth temperatures, is matched to the thermal expansion of silicon, provides the optical properties required for light trapping through random texturing, and can be formed in large areas on a continuous basis; b) Different deposition techniques have been investigated, andAstroPower has developed deposition processes for the back conductive layer, the p-type silicon layer, and the mechanical/chemical barrier layer. c) Polycrystalline films of silicon have been grown on ceramics using AstroPower's Silicon-Film(TM) process. These films are from 50 to 75 ?m thick, with columnar grains extending through the thickness of the film. Aspect ratios from 5:1 to 20:1 havebeen observed in these films.
Original languageAmerican English
Number of pages15
StatePublished - 1999

Bibliographical note

Work performed by AstroPower, Newark, Delaware

NREL Publication Number

  • NREL/SR-520-26122

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