Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

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Abstract

The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4?m range, while the deposition temperature was in the 650?-825?C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigatethe film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.

Original language	American English
Number of pages	8
State	Published - 1999
Event	National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 9 Sep 1998 → 11 Sep 1998

Conference

Conference	National Center for Photovoltaics Program Review Meeting
City	Denver, Colorado
Period	9/09/98 → 11/09/98

NREL Publication Number

NREL/CP-520-25857

Access to Document

https://www.nrel.gov/docs/fy99osti/25857.pdf

Cite this

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title = "Morphology and Microstructure of Thin-Film GaAs on Mo Substrates",

abstract = "The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4?m range, while the deposition temperature was in the 650?-825?C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigatethe film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.",

author = "NREL",

year = "1999",

language = "American English",

note = "National Center for Photovoltaics Program Review Meeting ; Conference date: 09-09-1998 Through 11-09-1998",

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TY - CONF

T1 - Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

AU - NREL, null

PY - 1999

Y1 - 1999

N2 - The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4?m range, while the deposition temperature was in the 650?-825?C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigatethe film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.

AB - The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4?m range, while the deposition temperature was in the 650?-825?C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigatethe film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.

M3 - Paper

T2 - National Center for Photovoltaics Program Review Meeting

Y2 - 9 September 1998 through 11 September 1998

ER -

Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

Abstract

Conference

NREL Publication Number

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