Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

Research output: Contribution to conferencePaper

Abstract

The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4?m range, while the deposition temperature was in the 650?-825?C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigatethe film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.
Original languageAmerican English
Number of pages8
StatePublished - 1999
EventNational Center for Photovoltaics Program Review Meeting - Denver, Colorado
Duration: 9 Sep 199811 Sep 1998

Conference

ConferenceNational Center for Photovoltaics Program Review Meeting
CityDenver, Colorado
Period9/09/9811/09/98

NREL Publication Number

  • NREL/CP-520-25857

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