Abstract
The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4?m range, while the deposition temperature was in the 650?-825?C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigatethe film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.
Original language | American English |
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Number of pages | 8 |
State | Published - 1999 |
Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 9 Sep 1998 → 11 Sep 1998 |
Conference
Conference | National Center for Photovoltaics Program Review Meeting |
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City | Denver, Colorado |
Period | 9/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25857