@misc{2b82727396a34e48b179b7e9475fc793,
title = "Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V Devices",
abstract = "In this work, we apply the morphology control of hydride vapor phase epitaxial (HVPE) growth to planarize faceted, non-planar substrates. Controlled spalling is a promising high-throughput substrate reuse technology that could reduce substrate costs for III-V devices; however, the spalling fracture for (100)-oriented GaAs substrates produces a regularly corrugated surface of facets that are 5-20 um in height. We discuss how to planarize these surfaces using only a few minutes of HVPE growth and how to minimize the impact on throughput when integrating faceted wafers into a potential manufacturing process at scale.",
keywords = "epitaxy, high throughput, HVPE, hydride vapor phase epitaxy, low cost, photovoltaic, PV, spalling",
author = "Anna Braun and Jacob Boyer and William McMahon and Kevin Schulte and John Simon and Corinne Packard and Aaron Ptak",
year = "2023",
language = "American English",
series = "Presented at the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), 15-18 May 2023, Orlando, Florida",
type = "Other",
}