MOVPE Growth and Characteristics of CdTe on InSb Substrates

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)480-484
    Number of pages5
    JournalJournal of Crystal Growth
    Issue number1-3
    StatePublished - 1986

    Bibliographical note

    Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

    NREL Publication Number

    • ACNR/JA-8297

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