Multimodal Microscopy of Extended Defects in ..beta..-Ga2O3 (010) EFG Crystals

Drew Haven, Helio Moutinho, John Mangum, Harvey Guthrey, David Joyce, Andriy Zakutayev, Nancy Haegel

Research output: Contribution to journalArticlepeer-review


Beta-phase gallium oxide (β-Ga2O3) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga2O3 crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga2O3 crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations.

Original languageAmerican English
Article numberArticle No. 075122
Number of pages5
JournalAIP Advances
Issue number7
StatePublished - 1 Jul 2023

Bibliographical note

Publisher Copyright:
© 2023 Author(s).

NREL Publication Number

  • NREL/JA-5K00-86264


  • EBSD
  • ECCI
  • edge defined film-fed growth
  • gallium oxide
  • grain boundaries
  • multimodal microscopy


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