Mutual Passivation of Electrically Active and Isovalent Impurities

K. M. Yu, W. Walukiewicz, J. Wu, D. E. Mars, D. R Chamberlin, M. A. Scarpulla, O. D. Dubon, J. F. Geisz

Research output: Contribution to journalArticlepeer-review

59 Scopus Citations


The alloy GaNxAs1-x (with x typically less than 0.05) is a novel semiconductor that has many interesting electronic properties because of the nitrogen-induced dramatic modifications of the conduction band structure of the host material (GaAs), Here we demonstrate the existence of an entirely new effect in the GaxAs1-x alloy system in which the Si donor in the substitututional Ga site (SiGa) and the isovalent atom N in the As sublattice (NAs) passivate each other's electronic activity. This mutual passivation occurs in Si-doped GaN xAs1-x through the formation of nearest-neighbour Si Ga-NAs pairs and is thermally stable up to 950 °C. Consequently, Si doping in GaNxAs1-x under equilibrium conditions results in a highly resistive GaNxAs1-x layer with the fundamental bandgap governed by a net 'active' N, roughly equal to the total N content minus the Si concentration. Such mutual passivation is expected to be a general phenomenon for electrically active dopants and localized state impurities that can form nearest-neighbour pairs.

Original languageAmerican English
Pages (from-to)185-189
Number of pages5
JournalNature Materials
Issue number3
StatePublished - 2002

NREL Publication Number

  • NREL/JA-520-34486


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