Mutual Passivation of Group IV Donors and Insovalent Nitrogen in Diluted GaNxAs1-x Alloys

K. M. Yu; J. Wu; W. Walukiewicz; W. Shan; J. W. Beeman; D. E. Mars; D. R. Chamberlin; M. A. Scarpulla; O. D. Dubon; M. C. Ridgway; J. F. Geisz

doi:10.1016/j.physb.2003.09.060

Mutual Passivation of Group IV Donors and Insovalent Nitrogen in Diluted GaNxAs1-x Alloys

K. M. Yu, J. Wu, W. Walukiewicz, W. Shan, J. W. Beeman, D. E. Mars, D. R. Chamberlin, M. A. Scarpulla, O. D. Dubon, M. C. Ridgway, J. F. Geisz

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN_xAs_1-x alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV_Ga-N_As pairs. In Si-doped GaInN_0.017As_0.983 the electron concentration starts to decrease rapidly at an annealing temperature of 700°C from ∼ 3 × 10¹⁹cm^-3 in the as-grown state to less than 10 ¹⁶cm^-3 after an annealing at 900°C for 10s. At the same time, annealing of this sample at 950°C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of Si_Ga-N_As pairs is controlled by the diffusion of Si via Ga vacancies to the nearest N_As site. The general nature of this mutual passivation effect is confirmed by our study of Ge-doped GaN_xAs_1-x layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting. Published by Elsevier B.V.

Original language	American English
Pages (from-to)	389-393
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.060 https://doi.org/10.1016/j.physb.2003.09.060
State	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

NREL Publication Number

NREL/JA-520-35927

Keywords

Band anticrossing
Band gap reduction
Diluted nitride
Mutual passivation

Access to Document

Cite this

Yu, K. M., Wu, J., Walukiewicz, W., Shan, W., Beeman, J. W., Mars, D. E., Chamberlin, D. R., Scarpulla, M. A., Dubon, O. D., Ridgway, M. C., & Geisz, J. F. (2003). Mutual Passivation of Group IV Donors and Insovalent Nitrogen in Diluted GaNxAs1-x Alloys. Physica B: Condensed Matter, 340-342, 389-393. https://doi.org/10.1016/j.physb.2003.09.060, https://doi.org/10.1016/j.physb.2003.09.060

@article{7c351955b4b843799efa5791a26a9da7,

title = "Mutual Passivation of Group IV Donors and Insovalent Nitrogen in Diluted GaNxAs1-x Alloys",

abstract = "We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaNxAs1-x alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IVGa-NAs pairs. In Si-doped GaInN0.017As0.983 the electron concentration starts to decrease rapidly at an annealing temperature of 700°C from ∼ 3 × 1019cm-3 in the as-grown state to less than 10 16cm-3 after an annealing at 900°C for 10s. At the same time, annealing of this sample at 950°C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of SiGa-NAs pairs is controlled by the diffusion of Si via Ga vacancies to the nearest NAs site. The general nature of this mutual passivation effect is confirmed by our study of Ge-doped GaNxAs1-x layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting. Published by Elsevier B.V.",

keywords = "Band anticrossing, Band gap reduction, Diluted nitride, Mutual passivation",

author = "Yu, {K. M.} and J. Wu and W. Walukiewicz and W. Shan and Beeman, {J. W.} and Mars, {D. E.} and Chamberlin, {D. R.} and Scarpulla, {M. A.} and Dubon, {O. D.} and Ridgway, {M. C.} and Geisz, {J. F.}",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.060",

language = "American English",

volume = "340-342",

pages = "389--393",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

}

Yu, KM, Wu, J, Walukiewicz, W, Shan, W, Beeman, JW, Mars, DE, Chamberlin, DR, Scarpulla, MA, Dubon, OD, Ridgway, MC & Geisz, JF 2003, 'Mutual Passivation of Group IV Donors and Insovalent Nitrogen in Diluted GaNxAs1-x Alloys', Physica B: Condensed Matter, vol. 340-342, pp. 389-393. https://doi.org/10.1016/j.physb.2003.09.060, https://doi.org/10.1016/j.physb.2003.09.060

TY - JOUR

T1 - Mutual Passivation of Group IV Donors and Insovalent Nitrogen in Diluted GaNxAs1-x Alloys

AU - Yu, K. M.

AU - Wu, J.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Beeman, J. W.

AU - Mars, D. E.

AU - Chamberlin, D. R.

AU - Scarpulla, M. A.

AU - Dubon, O. D.

AU - Ridgway, M. C.

AU - Geisz, J. F.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaNxAs1-x alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IVGa-NAs pairs. In Si-doped GaInN0.017As0.983 the electron concentration starts to decrease rapidly at an annealing temperature of 700°C from ∼ 3 × 1019cm-3 in the as-grown state to less than 10 16cm-3 after an annealing at 900°C for 10s. At the same time, annealing of this sample at 950°C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of SiGa-NAs pairs is controlled by the diffusion of Si via Ga vacancies to the nearest NAs site. The general nature of this mutual passivation effect is confirmed by our study of Ge-doped GaNxAs1-x layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting. Published by Elsevier B.V.

AB - We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaNxAs1-x alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IVGa-NAs pairs. In Si-doped GaInN0.017As0.983 the electron concentration starts to decrease rapidly at an annealing temperature of 700°C from ∼ 3 × 1019cm-3 in the as-grown state to less than 10 16cm-3 after an annealing at 900°C for 10s. At the same time, annealing of this sample at 950°C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of SiGa-NAs pairs is controlled by the diffusion of Si via Ga vacancies to the nearest NAs site. The general nature of this mutual passivation effect is confirmed by our study of Ge-doped GaNxAs1-x layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting. Published by Elsevier B.V.

KW - Band anticrossing

KW - Band gap reduction

KW - Diluted nitride

KW - Mutual passivation

UR - http://www.scopus.com/inward/record.url?scp=0346686056&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.060

DO - 10.1016/j.physb.2003.09.060

M3 - Article

AN - SCOPUS:0346686056

SN - 0921-4526

VL - 340-342

SP - 389

EP - 393

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Mutual Passivation of Group IV Donors and Insovalent Nitrogen in Diluted GaNxAs1-x Alloys

Abstract

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this