Mysterious Absence of Pair Luminescence in Gallium Phosphide Bismide

Theresa M. Christian, Daniel A. Beaton, Kirstin Alberi, Brian Fluegel, Angelo Mascarenhas

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Gallium phosphide bismide (GaP1-xBix) epilayers with x up to 1.0% were grown via molecular beam epitaxy and their photoluminescence spectra were investigated at low temperatures. Surprisingly, the emission spectrum of the GaP1-xBix epilayers was fully described by isolated bismuth-bound exciton recombination at the A and B lines (2.232 and 2.229 eV, respectively) together with their phonon replicas, without a need for any description of recombination from bismuth pair or cluster states. These observations contrast with the typical behavior of energy transfer to lowerlying nitrogen pair states in GaP1-yNy at similar impurity concentrations and offer insights into the electronic structure evolution of GaP1-xBix.

Original languageAmerican English
Article number061202
Number of pages4
JournalApplied Physics Express
Issue number6
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 The Japan Society of Applied Physics.

NREL Publication Number

  • NREL/JA-5K00-63948


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