Mysterious Absence of Pair Luminescence in Gallium Phosphide Bismide

Theresa M. Christian; Daniel A. Beaton; Kirstin Alberi; Brian Fluegel; Angelo Mascarenhas

doi:10.7567/APEX.8.061202

Mysterious Absence of Pair Luminescence in Gallium Phosphide Bismide

Theresa M. Christian, Daniel A. Beaton, Kirstin Alberi, Brian Fluegel, Angelo Mascarenhas

Materials Science

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10 Scopus Citations

Abstract

Gallium phosphide bismide (GaP_1-xBi_x) epilayers with x up to 1.0% were grown via molecular beam epitaxy and their photoluminescence spectra were investigated at low temperatures. Surprisingly, the emission spectrum of the GaP_1-xBi_x epilayers was fully described by isolated bismuth-bound exciton recombination at the A and B lines (2.232 and 2.229 eV, respectively) together with their phonon replicas, without a need for any description of recombination from bismuth pair or cluster states. These observations contrast with the typical behavior of energy transfer to lowerlying nitrogen pair states in GaP_1-yN_y at similar impurity concentrations and offer insights into the electronic structure evolution of GaP_1-xBi_x.

Original language	American English
Article number	061202
Number of pages	4
Journal	Applied Physics Express
Volume	8
Issue number	6
DOIs	https://doi.org/10.7567/APEX.8.061202 https://doi.org/10.7567/APEX.8.061202
State	Published - 2015

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Publisher Copyright:
© 2015 The Japan Society of Applied Physics.

NREL Publication Number

NREL/JA-5K00-63948

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title = "Mysterious Absence of Pair Luminescence in Gallium Phosphide Bismide",

abstract = "Gallium phosphide bismide (GaP1-xBix) epilayers with x up to 1.0% were grown via molecular beam epitaxy and their photoluminescence spectra were investigated at low temperatures. Surprisingly, the emission spectrum of the GaP1-xBix epilayers was fully described by isolated bismuth-bound exciton recombination at the A and B lines (2.232 and 2.229 eV, respectively) together with their phonon replicas, without a need for any description of recombination from bismuth pair or cluster states. These observations contrast with the typical behavior of energy transfer to lowerlying nitrogen pair states in GaP1-yNy at similar impurity concentrations and offer insights into the electronic structure evolution of GaP1-xBix.",

author = "Christian, {Theresa M.} and Beaton, {Daniel A.} and Kirstin Alberi and Brian Fluegel and Angelo Mascarenhas",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

year = "2015",

doi = "10.7567/APEX.8.061202",

language = "American English",

volume = "8",

journal = "Applied Physics Express",

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AU - Christian, Theresa M.

AU - Beaton, Daniel A.

AU - Alberi, Kirstin

AU - Fluegel, Brian

AU - Mascarenhas, Angelo

PY - 2015

Y1 - 2015

N2 - Gallium phosphide bismide (GaP1-xBix) epilayers with x up to 1.0% were grown via molecular beam epitaxy and their photoluminescence spectra were investigated at low temperatures. Surprisingly, the emission spectrum of the GaP1-xBix epilayers was fully described by isolated bismuth-bound exciton recombination at the A and B lines (2.232 and 2.229 eV, respectively) together with their phonon replicas, without a need for any description of recombination from bismuth pair or cluster states. These observations contrast with the typical behavior of energy transfer to lowerlying nitrogen pair states in GaP1-yNy at similar impurity concentrations and offer insights into the electronic structure evolution of GaP1-xBix.

AB - Gallium phosphide bismide (GaP1-xBix) epilayers with x up to 1.0% were grown via molecular beam epitaxy and their photoluminescence spectra were investigated at low temperatures. Surprisingly, the emission spectrum of the GaP1-xBix epilayers was fully described by isolated bismuth-bound exciton recombination at the A and B lines (2.232 and 2.229 eV, respectively) together with their phonon replicas, without a need for any description of recombination from bismuth pair or cluster states. These observations contrast with the typical behavior of energy transfer to lowerlying nitrogen pair states in GaP1-yNy at similar impurity concentrations and offer insights into the electronic structure evolution of GaP1-xBix.

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JO - Applied Physics Express

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Mysterious Absence of Pair Luminescence in Gallium Phosphide Bismide

Abstract

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