Na-Diffusion Enhanced p-type Conductivity in Cu(In,Ga)Se2: A New Mechanism for Efficient Doping in Semiconductors

Zhen-Kun Yuan, Shiyou Chen, Yun Xie, Hongjun Xiang, Xin-Gao Gong, Su-Huai Wei, Ji-Sang Park

Research output: Contribution to journalArticlepeer-review

120 Scopus Citations

Abstract

A new mechanism responsible for the hole concentration increase in the CIGS thin films after Na doping is proposed. At high temperature, a high concentration of Na is doped into the grains. After cooling and water rinsing, the solubility of Na becomes lower, so Na diffuses out of the grains with high concentration of Cu vacancies and hole carriers formed.
Original languageAmerican English
Number of pages7
JournalAdvanced Energy Materials
Volume6
Issue number24
DOIs
StatePublished - 2016

NREL Publication Number

  • NREL/JA-5K00-67119

Keywords

  • Cu(In,Ga)Se2 solar cells
  • first-principles calculations
  • hole carrier concentration
  • K doping and diffusion
  • Na doping and diffusion
  • p-type conductivity

Fingerprint

Dive into the research topics of 'Na-Diffusion Enhanced p-type Conductivity in Cu(In,Ga)Se2: A New Mechanism for Efficient Doping in Semiconductors'. Together they form a unique fingerprint.

Cite this