Abstract
A new mechanism responsible for the hole concentration increase in the CIGS thin films after Na doping is proposed. At high temperature, a high concentration of Na is doped into the grains. After cooling and water rinsing, the solubility of Na becomes lower, so Na diffuses out of the grains with high concentration of Cu vacancies and hole carriers formed.
Original language | American English |
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Number of pages | 7 |
Journal | Advanced Energy Materials |
Volume | 6 |
Issue number | 24 |
DOIs | |
State | Published - 2016 |
NREL Publication Number
- NREL/JA-5K00-67119
Keywords
- Cu(In,Ga)Se2 solar cells
- first-principles calculations
- hole carrier concentration
- K doping and diffusion
- Na doping and diffusion
- p-type conductivity