Abstract
The incorporation of Na into Cu(In1-xGax)Se2 thin-films is known to lead to an improvement in device performance. The authors use X-ray photoelectron and Auger election spectroscopies to determine the chemical nature of Na in Cu(In1-xGax)Se2 thin-films. The Na concentration is determined to be approx. 0.1 atomic percent in the bulk of Cu(In1-xGax)Se2 thin-films. The Na is chemically bonded to Se.The authors propose a model invoking the replacement of column III elements by Na during growth of Cu(In1-xGax)Se2 thin-films. These NaIn and NaGa defects act as acceptor states to increase the p-type conductivity of Cu(In1-xGax)Se2 thin-films.
| Original language | American English |
|---|---|
| Pages | 179-184 |
| Number of pages | 6 |
| State | Published - 1998 |
| Event | Thin-Film Structures for Photovoltaics: Materials Research Society Symposium - Boston, Massachusetts Duration: 2 Dec 1997 → 5 Dec 1997 |
Conference
| Conference | Thin-Film Structures for Photovoltaics: Materials Research Society Symposium |
|---|---|
| City | Boston, Massachusetts |
| Period | 2/12/97 → 5/12/97 |
NREL Publication Number
- NREL/CP-530-23901
