Nanocrystal Grain Growth and Device Architectures for High-Efficiency CdTe Ink-Based Photovoltaics

Ryan W. Crisp; Matthew G. Panthani; William L. Rance; Joel N. Duenow; Philip A. Parilla; Rebecca Callahan; Matthew S. Dabney; Joseph J. Berry; Dmitri V. Talapin; Joseph M. Luther

doi:10.1021/nn502442g

Nanocrystal Grain Growth and Device Architectures for High-Efficiency CdTe Ink-Based Photovoltaics

Ryan W. Crisp, Matthew G. Panthani, William L. Rance, Joel N. Duenow, Philip A. Parilla, Rebecca Callahan, Matthew S. Dabney, Joseph J. Berry, Dmitri V. Talapin, Joseph M. Luther

Research output: Contribution to journal › Article › peer-review

64 Scopus Citations

Abstract

We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.

Original language	American English
Pages (from-to)	9063-9072
Number of pages	10
Journal	ACS Nano
Volume	8
Issue number	9
DOIs	https://doi.org/10.1021/nn502442g https://doi.org/10.1021/nn502442g
State	Published - 23 Sep 2014

Bibliographical note

Publisher Copyright:
© 2014 American Chemical Society.

NREL Publication Number

NREL/JA-5900-61968

Keywords

CdTe
device architecture
grain growth
nanocrystal
photovoltaic
sintering
solution-processed

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

Cite this

@article{363958f3a704407d9e95679e592e9ea6,

title = "Nanocrystal Grain Growth and Device Architectures for High-Efficiency CdTe Ink-Based Photovoltaics",

abstract = "We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable {"}ink{"} for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.",

keywords = "CdTe, device architecture, grain growth, nanocrystal, photovoltaic, sintering, solution-processed",

author = "Crisp, {Ryan W.} and Panthani, {Matthew G.} and Rance, {William L.} and Duenow, {Joel N.} and Parilla, {Philip A.} and Rebecca Callahan and Dabney, {Matthew S.} and Berry, {Joseph J.} and Talapin, {Dmitri V.} and Luther, {Joseph M.}",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

year = "2014",

month = sep,

day = "23",

doi = "10.1021/nn502442g",

language = "American English",

volume = "8",

pages = "9063--9072",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "9",

}

TY - JOUR

T1 - Nanocrystal Grain Growth and Device Architectures for High-Efficiency CdTe Ink-Based Photovoltaics

AU - Crisp, Ryan W.

AU - Panthani, Matthew G.

AU - Rance, William L.

AU - Duenow, Joel N.

AU - Parilla, Philip A.

AU - Callahan, Rebecca

AU - Dabney, Matthew S.

AU - Berry, Joseph J.

AU - Talapin, Dmitri V.

AU - Luther, Joseph M.

PY - 2014/9/23

Y1 - 2014/9/23

N2 - We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.

AB - We study the use of cadmium telluride (CdTe) nanocrystal colloids as a solution-processable "ink" for large-grain CdTe absorber layers in solar cells. The resulting grain structure and solar cell performance depend on the initial nanocrystal size, shape, and crystal structure. We find that inks of predominantly wurtzite tetrapod-shaped nanocrystals with arms ∼5.6 nm in diameter exhibit better device performance compared to inks composed of smaller tetrapods, irregular faceted nanocrystals, or spherical zincblende nanocrystals despite the fact that the final sintered film has a zincblende crystal structure. Five different working device architectures were investigated. The indium tin oxide (ITO)/CdTe/zinc oxide structure leads to our best performing device architecture (with efficiency >11%) compared to others including two structures with a cadmium sulfide (CdS) n-type layer typically used in high efficiency sublimation-grown CdTe solar cells. Moreover, devices without CdS have improved response at short wavelengths.

KW - CdTe

KW - device architecture

KW - grain growth

KW - nanocrystal

KW - photovoltaic

KW - sintering

KW - solution-processed

UR - http://www.scopus.com/inward/record.url?scp=84923391174&partnerID=8YFLogxK

U2 - 10.1021/nn502442g

DO - 10.1021/nn502442g

M3 - Article

AN - SCOPUS:84923391174

SN - 1936-0851

VL - 8

SP - 9063

EP - 9072

JO - ACS Nano

JF - ACS Nano

IS - 9

ER -

Nanocrystal Grain Growth and Device Architectures for High-Efficiency CdTe Ink-Based Photovoltaics

Abstract

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this