Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films

Chun Sheng Jiang; Lorelle Mansfield; Helio Moutinho; Brian Egaas; Kannan Ramanathan; Mowafak Al-Jassim; Miguel Contreras

doi:10.1063/1.4907165

Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films

Chun Sheng Jiang, Lorelle Mansfield, Helio Moutinho, Brian Egaas, Kannan Ramanathan, Mowafak Al-Jassim, Miguel Contreras

Materials Science

Research output: Contribution to journal › Article › peer-review

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Abstract

We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se₂ photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.

Original language	American English
Article number	Article No. 043901
Number of pages	5
Journal	Applied Physics Letters
Volume	106
Issue number	4
DOIs	https://doi.org/10.1063/1.4907165 https://doi.org/10.1063/1.4907165
State	Published - 26 Jan 2015

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Publisher Copyright:
© 2015 AIP Publishing LLC.

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NREL/JA-5K00-63318

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@article{3cb498ab5dc8402da7dbd436c034f9c5,

title = "Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films",

abstract = "We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.",

author = "Jiang, {Chun Sheng} and Lorelle Mansfield and Helio Moutinho and Brian Egaas and Kannan Ramanathan and Mowafak Al-Jassim and Miguel Contreras",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = jan,

day = "26",

doi = "10.1063/1.4907165",

language = "American English",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films

AU - Jiang, Chun Sheng

AU - Mansfield, Lorelle

AU - Moutinho, Helio

AU - Egaas, Brian

AU - Ramanathan, Kannan

AU - Al-Jassim, Mowafak

AU - Contreras, Miguel

PY - 2015/1/26

Y1 - 2015/1/26

N2 - We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.

AB - We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.

UR - http://www.scopus.com/inward/record.url?scp=84923929593&partnerID=8YFLogxK

U2 - 10.1063/1.4907165

DO - 10.1063/1.4907165

M3 - Article

AN - SCOPUS:84923929593

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - Article No. 043901

ER -

Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films

Abstract

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UN SDGs

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