Nanometer-Scale Surface Potential and Resistance Mapping of Wide-Bandgap Cu(In,Ga)Se2 Thin Films

Chun Sheng Jiang, Lorelle Mansfield, Helio Moutinho, Brian Egaas, Kannan Ramanathan, Mowafak Al-Jassim, Miguel Contreras

Research output: Contribution to journalArticlepeer-review

10 Scopus Citations


We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 photovoltaic thin films using the nano-electrical probes of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. With increasing bandgap, the potential imaging shows significant increases in both the large potential features due to extended defects or defect aggregations and the potential fluctuation due to unresolvable point defects with single or a few charges. The resistance imaging shows increases in both overall resistance and resistance nonuniformity due to defects in the subsurface region. These defects are expected to affect open-circuit voltage after the surfaces are turned to junction upon device completion.

Original languageAmerican English
Article numberArticle No. 043901
Number of pages5
JournalApplied Physics Letters
Issue number4
StatePublished - 26 Jan 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5K00-63318


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