Nanopolar Reorientation in Ferroelectric Thin Films

C. Hubert; J. Levy; T. V. Rivkin; C. Carlson; P. A. Parilla; J. D. Perkins; D. S. Ginley

doi:10.1063/1.1406146

Nanopolar Reorientation in Ferroelectric Thin Films

C. Hubert, J. Levy, T. V. Rivkin, C. Carlson, P. A. Parilla, J. D. Perkins, D. S. Ginley

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Abstract

The influence of varying oxygen pressure P(O₂) during the growth of Ba_0.4Sr_0.6TiO₃ thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O₂). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (P_c=85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O₂)=P_c.

Original language	American English
Pages (from-to)	2058-2060
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	13
DOIs	https://doi.org/10.1063/1.1406146 https://doi.org/10.1063/1.1406146
State	Published - 2001

NREL Publication Number

NREL/JA-520-31850

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title = "Nanopolar Reorientation in Ferroelectric Thin Films",

abstract = "The influence of varying oxygen pressure P(O2) during the growth of Ba0.4Sr0.6TiO3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O2). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (Pc=85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O2)=Pc.",

author = "C. Hubert and J. Levy and Rivkin, {T. V.} and C. Carlson and Parilla, {P. A.} and Perkins, {J. D.} and Ginley, {D. S.}",

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T1 - Nanopolar Reorientation in Ferroelectric Thin Films

AU - Hubert, C.

AU - Levy, J.

AU - Rivkin, T. V.

AU - Carlson, C.

AU - Parilla, P. A.

AU - Perkins, J. D.

AU - Ginley, D. S.

PY - 2001

Y1 - 2001

N2 - The influence of varying oxygen pressure P(O2) during the growth of Ba0.4Sr0.6TiO3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O2). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (Pc=85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O2)=Pc.

AB - The influence of varying oxygen pressure P(O2) during the growth of Ba0.4Sr0.6TiO3 thin films is investigated using dielectric and local optical probes. A transition from in-plane to out-of-plane ferroelectricity is observed with increasing P(O2). Signatures of in-plane and out-of-plane ferroelectricity are identified using dielectric response and time-resolved confocal scanning optical microscopy (TRCSOM). At the crossover pressure between in-plane and out-of-plane polarization (Pc=85 mTorr), TRCSOM measurements reveal a soft, highly dispersive out-of-plane polarization that reorients in plane under modest applied electric fields. At higher deposition pressures, the out-of-plane polarization is hardened and is less dispersive at microwave frequencies, and the dielectric tuning is suppressed. Nanopolar reorientation is believed to be responsible for the marked increase in dielectric tuning at P(O2)=Pc.

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Nanopolar Reorientation in Ferroelectric Thin Films

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