Nanoscale Electrical Properties of Wide-Bandgap Cu(In,Ga)Se2 and Cu2ZnSn(SSe)4 Thin Films

Chun Sheng Jiang; Ingrid Repins; Lorelle Mansfield; Kannan Ramanathan; Mowafak Al-Jassim; Miguel Contreras; Carolyn Beall

doi:10.1109/PVSC.2014.6925651

Nanoscale Electrical Properties of Wide-Bandgap Cu(In,Ga)Se2 and Cu2ZnSn(SSe)4 Thin Films

Chun Sheng Jiang, Ingrid Repins, Lorelle Mansfield, Kannan Ramanathan, Mowafak Al-Jassim, Miguel Contreras, Carolyn Beall

Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se₂ (CIGSe) and wide-bandgap Cu₂ZnSn(SSe)₄ (CZTSS) thin films using the nanoscale electrical probes of scanning Kelvin force microscopy and scanning spreading resistance microscopy. These films were deposited by the co-evaporation of the elements in a vacuum. The CIGSe films are NREL's recently improved wide-bandgap devices. The potential imaging shows significant increase in surface potential roughness with increasing the bandgaps, indicating degradation of the film surface by charge-trapping defects. These defects are expected to significantly affect open-circuit voltage after the surfaces are turned to junction upon device completion. The resistance imaging shows increase in both the overall resistance and resistance nonuniformity, likely because of defect scattering to carrier transport.

Original language	American English
Pages	3341-3346
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2014.6925651 https://doi.org/10.1109/PVSC.2014.6925651
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5K00-61363

Keywords

CIGSe
CZTSS
electrical property
nanometer scale
scanning Kelvin probe force microscopy
scanning spreading resistance microscopy
wide bandgap

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Jiang, C. S., Repins, I., Mansfield, L., Ramanathan, K., Al-Jassim, M., Contreras, M., & Beall, C. (2014). Nanoscale Electrical Properties of Wide-Bandgap Cu(In,Ga)Se2 and Cu2ZnSn(SSe)4 Thin Films. 3341-3346. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925651, https://doi.org/10.1109/PVSC.2014.6925651

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abstract = "We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 (CIGSe) and wide-bandgap Cu2ZnSn(SSe)4 (CZTSS) thin films using the nanoscale electrical probes of scanning Kelvin force microscopy and scanning spreading resistance microscopy. These films were deposited by the co-evaporation of the elements in a vacuum. The CIGSe films are NREL's recently improved wide-bandgap devices. The potential imaging shows significant increase in surface potential roughness with increasing the bandgaps, indicating degradation of the film surface by charge-trapping defects. These defects are expected to significantly affect open-circuit voltage after the surfaces are turned to junction upon device completion. The resistance imaging shows increase in both the overall resistance and resistance nonuniformity, likely because of defect scattering to carrier transport.",

keywords = "CIGSe, CZTSS, electrical property, nanometer scale, scanning Kelvin probe force microscopy, scanning spreading resistance microscopy, wide bandgap",

author = "Jiang, {Chun Sheng} and Ingrid Repins and Lorelle Mansfield and Kannan Ramanathan and Mowafak Al-Jassim and Miguel Contreras and Carolyn Beall",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925651",

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Jiang, CS , Repins, I , Mansfield, L, Ramanathan, K, Al-Jassim, M, Contreras, M & Beall, C 2014, 'Nanoscale Electrical Properties of Wide-Bandgap Cu(In,Ga)Se2 and Cu2ZnSn(SSe)4 Thin Films', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 3341-3346. https://doi.org/10.1109/PVSC.2014.6925651, https://doi.org/10.1109/PVSC.2014.6925651

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AU - Mansfield, Lorelle

AU - Ramanathan, Kannan

AU - Al-Jassim, Mowafak

AU - Contreras, Miguel

AU - Beall, Carolyn

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AB - We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 (CIGSe) and wide-bandgap Cu2ZnSn(SSe)4 (CZTSS) thin films using the nanoscale electrical probes of scanning Kelvin force microscopy and scanning spreading resistance microscopy. These films were deposited by the co-evaporation of the elements in a vacuum. The CIGSe films are NREL's recently improved wide-bandgap devices. The potential imaging shows significant increase in surface potential roughness with increasing the bandgaps, indicating degradation of the film surface by charge-trapping defects. These defects are expected to significantly affect open-circuit voltage after the surfaces are turned to junction upon device completion. The resistance imaging shows increase in both the overall resistance and resistance nonuniformity, likely because of defect scattering to carrier transport.

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KW - CZTSS

KW - electrical property

KW - nanometer scale

KW - scanning Kelvin probe force microscopy

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ER -

Nanoscale Electrical Properties of Wide-Bandgap Cu(In,Ga)Se2 and Cu2ZnSn(SSe)4 Thin Films

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Conference

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NREL Publication Number

Keywords

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