Nanoscale Electrical Properties of Wide-Bandgap Cu(In,Ga)Se2 and Cu2ZnSn(SSe)4 Thin Films

Chun Sheng Jiang, Ingrid Repins, Lorelle Mansfield, Kannan Ramanathan, Mowafak Al-Jassim, Miguel Contreras, Carolyn Beall

Research output: Contribution to conferencePaperpeer-review


We report microscopic characterization studies of wide-bandgap Cu(In,Ga)Se2 (CIGSe) and wide-bandgap Cu2ZnSn(SSe)4 (CZTSS) thin films using the nanoscale electrical probes of scanning Kelvin force microscopy and scanning spreading resistance microscopy. These films were deposited by the co-evaporation of the elements in a vacuum. The CIGSe films are NREL's recently improved wide-bandgap devices. The potential imaging shows significant increase in surface potential roughness with increasing the bandgaps, indicating degradation of the film surface by charge-trapping defects. These defects are expected to significantly affect open-circuit voltage after the surfaces are turned to junction upon device completion. The resistance imaging shows increase in both the overall resistance and resistance nonuniformity, likely because of defect scattering to carrier transport.

Original languageAmerican English
Number of pages6
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5K00-61363


  • CIGSe
  • electrical property
  • nanometer scale
  • scanning Kelvin probe force microscopy
  • scanning spreading resistance microscopy
  • wide bandgap


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