Nanoscale Investigation of Grain Boundary Characteristics of Single-Crystalline-Like GaAs Films and Solar Cells on Flexible Metal Substrates

Harvey Guthrey, Pavel Dutta, Jonathan Poplawsky, Monika Rathi, Devendra Khatiwada, Sicong Sun, Yao Yao, Bo Yu, Eduard Galstyan, Venkat Selvamanickam

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

High-resolution imaging with nanometer spatial resolution was carried out to unravel the grain and grain boundary (GB) properties of single-crystalline-like n-type GaAs films and single-junction solar cells on epi-ready flexible metal substrates. Electron Back Scattered Diffraction studies revealed ultra-low angle GBs with the presence of twin boundaries. The pn junction carrier collection properties were directly imaged using cross-sectional Electron Beam Induced Current measurements. Low-temperature Cathodoluminescence imaging indicated a strong component of optical emission from the GBs. Comprehensive studies of the structural, chemical, optical and electrical properties were carried out to unravel the fundamental GB properties of flexible GaAs films on metal substrates.

Original languageAmerican English
Pages58-61
Number of pages4
DOIs
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

  • NREL/CP-5K00-73684

Keywords

  • epitaxial growth
  • flexible substrate
  • gallium arsenide
  • MOCVD
  • photovoltaic cells

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