Abstract
High-resolution imaging with nanometer spatial resolution was carried out to unravel the grain and grain boundary (GB) properties of single-crystalline-like n-type GaAs films and single-junction solar cells on epi-ready flexible metal substrates. Electron Back Scattered Diffraction studies revealed ultra-low angle GBs with the presence of twin boundaries. The pn junction carrier collection properties were directly imaged using cross-sectional Electron Beam Induced Current measurements. Low-temperature Cathodoluminescence imaging indicated a strong component of optical emission from the GBs. Comprehensive studies of the structural, chemical, optical and electrical properties were carried out to unravel the fundamental GB properties of flexible GaAs films on metal substrates.
Original language | American English |
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Pages | 58-61 |
Number of pages | 4 |
DOIs | |
State | Published - 26 Nov 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018 |
Conference
Conference | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country/Territory | United States |
City | Waikoloa Village |
Period | 10/06/18 → 15/06/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
NREL Publication Number
- NREL/CP-5K00-73684
Keywords
- epitaxial growth
- flexible substrate
- gallium arsenide
- MOCVD
- photovoltaic cells