Nanoscale Measurements of Local Junction Breakdown in Epitaxial Film Silicon Solar Cells

M. J. Romero; K. Alberi; I. T. Martin; K. M. Jones; D. L. Young; Y. Yan; C. Teplin; M. M. Al-Jassim; P. Stradins; H. M. Branz

doi:10.1063/1.3479534

Nanoscale Measurements of Local Junction Breakdown in Epitaxial Film Silicon Solar Cells

M. J. Romero, K. Alberi, I. T. Martin, K. M. Jones, D. L. Young, Y. Yan, C. Teplin, M. M. Al-Jassim, P. Stradins, H. M. Branz

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

In this contribution, the authors report on near-field scanning optical microscopy measurements of the luminescence emitted from localized junction breakdown in epitaxial silicon solar cells. Our measurements suggest that the observed local reduction in breakdown voltage results from avalanche multiplication assisted by the reinforcing combination of (i) the local enhancement of the electrostatic field at the apex of inverted pyramid pits and (ii) the participation of defect states in the avalanche breakdown. Transmission electron microscopy reveals the microstructure of the defect responsible for the local junction breakdown.

Original language	American English
Article number	Article No. 092107
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	9
DOIs	https://doi.org/10.1063/1.3479534 https://doi.org/10.1063/1.3479534
State	Published - 30 Aug 2010

NREL Publication Number

NREL/JA-520-48878

Keywords

cell efficiency
device performance
solar cells

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title = "Nanoscale Measurements of Local Junction Breakdown in Epitaxial Film Silicon Solar Cells",

abstract = "In this contribution, the authors report on near-field scanning optical microscopy measurements of the luminescence emitted from localized junction breakdown in epitaxial silicon solar cells. Our measurements suggest that the observed local reduction in breakdown voltage results from avalanche multiplication assisted by the reinforcing combination of (i) the local enhancement of the electrostatic field at the apex of inverted pyramid pits and (ii) the participation of defect states in the avalanche breakdown. Transmission electron microscopy reveals the microstructure of the defect responsible for the local junction breakdown.",

keywords = "cell efficiency, device performance, solar cells",

author = "Romero, {M. J.} and K. Alberi and Martin, {I. T.} and Jones, {K. M.} and Young, {D. L.} and Y. Yan and C. Teplin and Al-Jassim, {M. M.} and P. Stradins and Branz, {H. M.}",

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month = aug,

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volume = "97",

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AU - Romero, M. J.

AU - Alberi, K.

AU - Martin, I. T.

AU - Jones, K. M.

AU - Young, D. L.

AU - Yan, Y.

AU - Teplin, C.

AU - Al-Jassim, M. M.

AU - Stradins, P.

AU - Branz, H. M.

PY - 2010/8/30

Y1 - 2010/8/30

N2 - In this contribution, the authors report on near-field scanning optical microscopy measurements of the luminescence emitted from localized junction breakdown in epitaxial silicon solar cells. Our measurements suggest that the observed local reduction in breakdown voltage results from avalanche multiplication assisted by the reinforcing combination of (i) the local enhancement of the electrostatic field at the apex of inverted pyramid pits and (ii) the participation of defect states in the avalanche breakdown. Transmission electron microscopy reveals the microstructure of the defect responsible for the local junction breakdown.

AB - In this contribution, the authors report on near-field scanning optical microscopy measurements of the luminescence emitted from localized junction breakdown in epitaxial silicon solar cells. Our measurements suggest that the observed local reduction in breakdown voltage results from avalanche multiplication assisted by the reinforcing combination of (i) the local enhancement of the electrostatic field at the apex of inverted pyramid pits and (ii) the participation of defect states in the avalanche breakdown. Transmission electron microscopy reveals the microstructure of the defect responsible for the local junction breakdown.

KW - cell efficiency

KW - device performance

KW - solar cells

UR - http://www.scopus.com/inward/record.url?scp=77956390634&partnerID=8YFLogxK

U2 - 10.1063/1.3479534

DO - 10.1063/1.3479534

M3 - Article

AN - SCOPUS:77956390634

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - Article No. 092107

ER -

Nanoscale Measurements of Local Junction Breakdown in Epitaxial Film Silicon Solar Cells

Abstract

NREL Publication Number

Keywords

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