Abstract
We report on recent advances in the development of nanoscale measurements of the surface photovoltage (SPV) based on scanning tunneling microscopy (STM) and its application to the kesterites Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe). One critical aspect of the electronic structure of Cu(In,Ga)Se2 (CIGS) that has yet to be determined in their related kesterite compounds is the character of thesurface electronics. In CIGS, spontaneous deviations in the stoichiometry of the surface cause a depletion (or even a type inversion) region that reinforces the CIGS homojunction. First-principle calculations predict that this inversion region will be more difficult to form in CZTS. In this contribution, the characteristics of the surface space charge region for both CIGS and CZTS(e) areinvestigated by STM. The implications of the results of these measurements on the future development of CZTS solar cells will be discussed.
| Original language | American English |
|---|---|
| Number of pages | 6 |
| State | Published - 2011 |
| Event | 37th IEEE Photovoltaic Specialists Conference (PVSC 37) - Seattle, Washington Duration: 19 Jun 2011 → 24 Jun 2011 |
Conference
| Conference | 37th IEEE Photovoltaic Specialists Conference (PVSC 37) |
|---|---|
| City | Seattle, Washington |
| Period | 19/06/11 → 24/06/11 |
NREL Publication Number
- NREL/CP-5200-50711
Keywords
- CIGS
- CZTS
- CZTSe
- PV
- solar cells
- surface electronics