Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells

H. Du; M. J. Romero; I. Repins; G. Teeter; R. Noufi; M. M. Al-Jassim

doi:10.1109/pvsc.2011.6186342

Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells

H. Du, M. J. Romero, I. Repins, G. Teeter, R. Noufi, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

We report on recent advances in the development of nanoscale measurements of the surface photovoltage (SPV) based on scanning tunneling microscopy (STM) and its application to the kesterites Cu ₂ZnSnS ₄ (CZTS) and Cu ₂ZnSnSe ₄ (CZTSe). One critical aspect of the electronic structure of Cu(In, Ga)Se ₂ (CIGS) that has yet to be determined in their related kesterite compounds is the character of the surface electronics. In CIGS, spontaneous deviations in the stoichiometry of the surface cause a depletion (or even a type inversion) region that reinforces the CIGS homojunction. First-principle calculations predict that this inversion region will be more difficult to form in CZTS. In this contribution, the characteristics of the surface space charge region for both CIGS and CZTS(e) are investigated by STM. The implications of the results of these measurements on the future development of CZTS solar cells will be discussed.

Original language	American English
Pages	1983-1986
Number of pages	4
DOIs	https://doi.org/10.1109/pvsc.2011.6186342 https://doi.org/10.1109/PVSC.2011.6186342
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

Bibliographical note

See NREL/CP-5200-50711 for preprint

NREL Publication Number

NREL/CP-5200-55708

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Cite this

Du, H., Romero, M. J., Repins, I., Teeter, G., Noufi, R., & Al-Jassim, M. M. (2011). Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells. 1983-1986. Paper presented at 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States. https://doi.org/10.1109/pvsc.2011.6186342, https://doi.org/10.1109/PVSC.2011.6186342

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title = "Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells",

abstract = "We report on recent advances in the development of nanoscale measurements of the surface photovoltage (SPV) based on scanning tunneling microscopy (STM) and its application to the kesterites Cu 2ZnSnS 4 (CZTS) and Cu 2ZnSnSe 4 (CZTSe). One critical aspect of the electronic structure of Cu(In, Ga)Se 2 (CIGS) that has yet to be determined in their related kesterite compounds is the character of the surface electronics. In CIGS, spontaneous deviations in the stoichiometry of the surface cause a depletion (or even a type inversion) region that reinforces the CIGS homojunction. First-principle calculations predict that this inversion region will be more difficult to form in CZTS. In this contribution, the characteristics of the surface space charge region for both CIGS and CZTS(e) are investigated by STM. The implications of the results of these measurements on the future development of CZTS solar cells will be discussed.",

author = "H. Du and Romero, {M. J.} and I. Repins and G. Teeter and R. Noufi and Al-Jassim, {M. M.}",

note = "See NREL/CP-5200-50711 for preprint; 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

year = "2011",

doi = "10.1109/pvsc.2011.6186342",

language = "American English",

pages = "1983--1986",

}

Du, H, Romero, MJ, Repins, I , Teeter, G, Noufi, R & Al-Jassim, MM 2011, 'Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells', Paper presented at 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 19/06/11 - 24/06/11 pp. 1983-1986. https://doi.org/10.1109/pvsc.2011.6186342, https://doi.org/10.1109/PVSC.2011.6186342

Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells. / Du, H.; Romero, M. J.; Repins, I. et al.
2011. 1983-1986 Paper presented at 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells

AU - Du, H.

AU - Romero, M. J.

AU - Repins, I.

AU - Teeter, G.

AU - Noufi, R.

AU - Al-Jassim, M. M.

N1 - See NREL/CP-5200-50711 for preprint

PY - 2011

Y1 - 2011

N2 - We report on recent advances in the development of nanoscale measurements of the surface photovoltage (SPV) based on scanning tunneling microscopy (STM) and its application to the kesterites Cu 2ZnSnS 4 (CZTS) and Cu 2ZnSnSe 4 (CZTSe). One critical aspect of the electronic structure of Cu(In, Ga)Se 2 (CIGS) that has yet to be determined in their related kesterite compounds is the character of the surface electronics. In CIGS, spontaneous deviations in the stoichiometry of the surface cause a depletion (or even a type inversion) region that reinforces the CIGS homojunction. First-principle calculations predict that this inversion region will be more difficult to form in CZTS. In this contribution, the characteristics of the surface space charge region for both CIGS and CZTS(e) are investigated by STM. The implications of the results of these measurements on the future development of CZTS solar cells will be discussed.

AB - We report on recent advances in the development of nanoscale measurements of the surface photovoltage (SPV) based on scanning tunneling microscopy (STM) and its application to the kesterites Cu 2ZnSnS 4 (CZTS) and Cu 2ZnSnSe 4 (CZTSe). One critical aspect of the electronic structure of Cu(In, Ga)Se 2 (CIGS) that has yet to be determined in their related kesterite compounds is the character of the surface electronics. In CIGS, spontaneous deviations in the stoichiometry of the surface cause a depletion (or even a type inversion) region that reinforces the CIGS homojunction. First-principle calculations predict that this inversion region will be more difficult to form in CZTS. In this contribution, the characteristics of the surface space charge region for both CIGS and CZTS(e) are investigated by STM. The implications of the results of these measurements on the future development of CZTS solar cells will be discussed.

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DO - 10.1109/pvsc.2011.6186342

M3 - Paper

AN - SCOPUS:84861074866

SP - 1983

EP - 1986

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -

Du H, Romero MJ, Repins I , Teeter G, Noufi R, Al-Jassim MM. Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells. 2011. Paper presented at 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States. doi: 10.1109/pvsc.2011.6186342, 10.1109/PVSC.2011.6186342

Nanoscale Measurements of the Surface Photovoltage in Cu(In,Ga)Se2, Cu2ZnSnS4, and Cu2ZnSnSe4 Thin Films: The Role of the Surface Electronics on the Efficiency of Solar Cells

Abstract

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Bibliographical note

NREL Publication Number

Access to Document

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