Nanostructure Containing Organic-Metal Halide Perskovites

Jeffrey Blackburn; Kai Zhu; Mengjin Yang; Rachelle Ihly; Anne-Marie Dowgiallo

Nanostructure Containing Organic-Metal Halide Perskovites

Jeffrey Blackburn (Inventor), Kai Zhu (Inventor), Mengjin Yang (Inventor), Rachelle Ihly (Inventor), Anne-Marie Dowgiallo (Inventor)

National Renewable Energy Laboratory

Research output: Patent

Abstract

Described herein is a device that includes an alkyl ammonium metal halide perovskite layer, and a nanostructured semiconductor layer in physical contact with the alkyl ammonium metal halide perovskite layer. The alkyl ammonium metal halide perovskite layer may include methyl ammonium cations. The alkyl ammonium metal halide perovskite layer may include anions of at least one of chlorine, bromine, astatine, and/or iodine. The alkyl ammonium metal halide perovskite layer may include cations of a metal in a 2+ valence state. The metal may include at least one of lead, tin, and/or germanium.

Original language	American English
Patent number	10,586,657 B2
Filing date	10/03/20
State	Published - 2020

NREL Publication Number

NREL/PT-5K00-76407

Keywords

alkyl ammonium metal halide perovskite
nanostructured semiconductor layer

Access to Document

https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/10586657

Cite this

@misc{7f006d5ade5548aea629f4edc1907440,

title = "Nanostructure Containing Organic-Metal Halide Perskovites",

abstract = "Described herein is a device that includes an alkyl ammonium metal halide perovskite layer, and a nanostructured semiconductor layer in physical contact with the alkyl ammonium metal halide perovskite layer. The alkyl ammonium metal halide perovskite layer may include methyl ammonium cations. The alkyl ammonium metal halide perovskite layer may include anions of at least one of chlorine, bromine, astatine, and/or iodine. The alkyl ammonium metal halide perovskite layer may include cations of a metal in a 2+ valence state. The metal may include at least one of lead, tin, and/or germanium.",

keywords = "alkyl ammonium metal halide perovskite, nanostructured semiconductor layer",

author = "Jeffrey Blackburn and Kai Zhu and Mengjin Yang and Rachelle Ihly and Anne-Marie Dowgiallo",

year = "2020",

language = "American English",

type = "Patent",

note = "10,586,657 B2",

}

TY - PAT

T1 - Nanostructure Containing Organic-Metal Halide Perskovites

AU - Blackburn, Jeffrey

AU - Zhu, Kai

AU - Yang, Mengjin

AU - Ihly, Rachelle

AU - Dowgiallo, Anne-Marie

PY - 2020

Y1 - 2020

N2 - Described herein is a device that includes an alkyl ammonium metal halide perovskite layer, and a nanostructured semiconductor layer in physical contact with the alkyl ammonium metal halide perovskite layer. The alkyl ammonium metal halide perovskite layer may include methyl ammonium cations. The alkyl ammonium metal halide perovskite layer may include anions of at least one of chlorine, bromine, astatine, and/or iodine. The alkyl ammonium metal halide perovskite layer may include cations of a metal in a 2+ valence state. The metal may include at least one of lead, tin, and/or germanium.

AB - Described herein is a device that includes an alkyl ammonium metal halide perovskite layer, and a nanostructured semiconductor layer in physical contact with the alkyl ammonium metal halide perovskite layer. The alkyl ammonium metal halide perovskite layer may include methyl ammonium cations. The alkyl ammonium metal halide perovskite layer may include anions of at least one of chlorine, bromine, astatine, and/or iodine. The alkyl ammonium metal halide perovskite layer may include cations of a metal in a 2+ valence state. The metal may include at least one of lead, tin, and/or germanium.

KW - alkyl ammonium metal halide perovskite

KW - nanostructured semiconductor layer

M3 - Patent

M1 - 10,586,657 B2

Y2 - 2020/03/10

ER -

Nanostructure Containing Organic-Metal Halide Perskovites

Abstract

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this