Nanostructure Evolution in Hydrogenated Amorphous Silicon during Hydrogen Effusion and Crystallization

David L. Young; Paul Stradins; Yueqin Xu; Lynn M. Gedvilas; Eugene Iwaniczko; Yanfa Yan; Howard M. Branz; Qi Wang.; Don L. Williamson

doi:10.1063/1.2435959

Nanostructure Evolution in Hydrogenated Amorphous Silicon during Hydrogen Effusion and Crystallization

David L. Young, Paul Stradins, Yueqin Xu, Lynn M. Gedvilas, Eugene Iwaniczko, Yanfa Yan, Howard M. Branz, Qi Wang., Don L. Williamson

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

19 Scopus Citations

Abstract

The authors report a study by small-angle x-ray scattering (SAXS) and tilting SAXS of nanovoids in amorphous silicon films undergoing solid phase crystallization (SPC) by annealing. SPC causes nanovoids in hot-wire chemical vapor deposited (HWCVD) amorphous Si films to decrease in total void fraction but increase in individual void volume. During annealing, the voids also change shape from prolate spheroids to more spherical geometries. Preexisting, large H clusters in as-deposited HWCVD films may provide favorable sites for void expansion driven by H2 pressure, while energy minimization and strain relaxation drive geometric changes.

Original language	American English
Article number	Article No. 081923
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	8
DOIs	https://doi.org/10.1063/1.2435959 https://doi.org/10.1063/1.2435959
State	Published - 2007

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NREL/JA-520-40769

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title = "Nanostructure Evolution in Hydrogenated Amorphous Silicon during Hydrogen Effusion and Crystallization",

abstract = "The authors report a study by small-angle x-ray scattering (SAXS) and tilting SAXS of nanovoids in amorphous silicon films undergoing solid phase crystallization (SPC) by annealing. SPC causes nanovoids in hot-wire chemical vapor deposited (HWCVD) amorphous Si films to decrease in total void fraction but increase in individual void volume. During annealing, the voids also change shape from prolate spheroids to more spherical geometries. Preexisting, large H clusters in as-deposited HWCVD films may provide favorable sites for void expansion driven by H2 pressure, while energy minimization and strain relaxation drive geometric changes.",

author = "Young, {David L.} and Paul Stradins and Yueqin Xu and Gedvilas, {Lynn M.} and Eugene Iwaniczko and Yanfa Yan and Branz, {Howard M.} and Qi Wang. and Williamson, {Don L.}",

year = "2007",

doi = "10.1063/1.2435959",

language = "American English",

volume = "90",

journal = "Applied Physics Letters",

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AU - Young, David L.

AU - Stradins, Paul

AU - Xu, Yueqin

AU - Gedvilas, Lynn M.

AU - Iwaniczko, Eugene

AU - Yan, Yanfa

AU - Branz, Howard M.

AU - Wang., Qi

AU - Williamson, Don L.

PY - 2007

Y1 - 2007

N2 - The authors report a study by small-angle x-ray scattering (SAXS) and tilting SAXS of nanovoids in amorphous silicon films undergoing solid phase crystallization (SPC) by annealing. SPC causes nanovoids in hot-wire chemical vapor deposited (HWCVD) amorphous Si films to decrease in total void fraction but increase in individual void volume. During annealing, the voids also change shape from prolate spheroids to more spherical geometries. Preexisting, large H clusters in as-deposited HWCVD films may provide favorable sites for void expansion driven by H2 pressure, while energy minimization and strain relaxation drive geometric changes.

AB - The authors report a study by small-angle x-ray scattering (SAXS) and tilting SAXS of nanovoids in amorphous silicon films undergoing solid phase crystallization (SPC) by annealing. SPC causes nanovoids in hot-wire chemical vapor deposited (HWCVD) amorphous Si films to decrease in total void fraction but increase in individual void volume. During annealing, the voids also change shape from prolate spheroids to more spherical geometries. Preexisting, large H clusters in as-deposited HWCVD films may provide favorable sites for void expansion driven by H2 pressure, while energy minimization and strain relaxation drive geometric changes.

UR - http://www.scopus.com/inward/record.url?scp=33847211355&partnerID=8YFLogxK

U2 - 10.1063/1.2435959

DO - 10.1063/1.2435959

M3 - Article

AN - SCOPUS:33847211355

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - Article No. 081923

ER -

Nanostructure Evolution in Hydrogenated Amorphous Silicon during Hydrogen Effusion and Crystallization

Abstract

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