Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition

Brent P. Nelson, Yueqin Xu, D. L. Williamson, Daxing Han, Rubin Braunstein, M. Boshta, B. Alavi

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations


We have improved the quality of our narrow bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV having a photoresponse equal to or better than our plasma enhanced CVD grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

Original languageAmerican English
Pages (from-to)104-109
Number of pages6
JournalThin Solid Films
Issue number1-2
StatePublished - 2003
EventProceedings of the Second International Conference on CAT-CVD - Denver, CO, United States
Duration: 10 Sep 200213 Sep 2002

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-33142

NREL Publication Number

  • NREL/JA-520-35004


  • Alloy
  • Germanium
  • Hot-wire
  • Silicon


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