Abstract
We have improved the quality of our narrow bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV having a photoresponse equal to or better than our plasma enhanced CVD grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.
Original language | American English |
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Pages (from-to) | 104-109 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 430 |
Issue number | 1-2 |
DOIs | |
State | Published - 2003 |
Event | Proceedings of the Second International Conference on CAT-CVD - Denver, CO, United States Duration: 10 Sep 2002 → 13 Sep 2002 |
Bibliographical note
For preprint version, including full text online document, see NREL/CP-520-33142NREL Publication Number
- NREL/JA-520-35004
Keywords
- Alloy
- Germanium
- Hot-wire
- Silicon