Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition

Brent P. Nelson; Yueqin Xu; D. L. Williamson; Daxing Han; Rubin Braunstein; M. Boshta; B. Alavi

doi:10.1016/S0040-6090(03)00085-3

Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition

Brent P. Nelson
, Yueqin Xu
, D. L. Williamson
, Daxing Han
, Rubin Braunstein
, M. Boshta
, B. Alavi

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to journal › Article › peer-review

5 Scopus Citations

Abstract

We have improved the quality of our narrow bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV having a photoresponse equal to or better than our plasma enhanced CVD grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

Original language	American English
Pages (from-to)	104-109
Number of pages	6
Journal	Thin Solid Films
Volume	430
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00085-3 https://doi.org/10.1016/S0040-6090(03)00085-3
State	Published - 2003
Event	Proceedings of the Second International Conference on CAT-CVD - Denver, CO, United States Duration: 10 Sep 2002 → 13 Sep 2002

Bibliographical note

For preprint version, including full text online document, see NREL/CP-520-33142

NLR Publication Number

NREL/JA-520-35004

Keywords

Alloy
Germanium
Hot-wire
Silicon

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@article{ac6a1cebd0ee46c4908d8dbf05280450,

title = "Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition",

abstract = "We have improved the quality of our narrow bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV having a photoresponse equal to or better than our plasma enhanced CVD grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.",

keywords = "Alloy, Germanium, Hot-wire, Silicon",

author = "Nelson, \{Brent P.\} and Yueqin Xu and Williamson, \{D. L.\} and Daxing Han and Rubin Braunstein and M. Boshta and B. Alavi",

note = "For preprint version, including full text online document, see NREL/CP-520-33142; Proceedings of the Second International Conference on CAT-CVD ; Conference date: 10-09-2002 Through 13-09-2002",

year = "2003",

doi = "10.1016/S0040-6090(03)00085-3",

language = "American English",

volume = "430",

pages = "104--109",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition

AU - Nelson, Brent P.

AU - Xu, Yueqin

AU - Williamson, D. L.

AU - Han, Daxing

AU - Braunstein, Rubin

AU - Boshta, M.

AU - Alavi, B.

N1 - For preprint version, including full text online document, see NREL/CP-520-33142

PY - 2003

Y1 - 2003

N2 - We have improved the quality of our narrow bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV having a photoresponse equal to or better than our plasma enhanced CVD grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

AB - We have improved the quality of our narrow bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV having a photoresponse equal to or better than our plasma enhanced CVD grown alloys. We enhanced the transport properties - as measured by the photoconductivity frequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity while photoluminescence showed an order of magnitude increase in defect density for a similar change in the process.

KW - Alloy

KW - Germanium

KW - Hot-wire

KW - Silicon

UR - https://www.scopus.com/pages/publications/0038147212

U2 - 10.1016/S0040-6090(03)00085-3

DO - 10.1016/S0040-6090(03)00085-3

M3 - Article

AN - SCOPUS:0038147212

SN - 0040-6090

VL - 430

SP - 104

EP - 109

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the Second International Conference on CAT-CVD

Y2 - 10 September 2002 through 13 September 2002

ER -

Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition

Abstract

Bibliographical note

NLR Publication Number

Keywords

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