Narrow Gap a-SiGe:H Grown by Hot-Wire Chemical Vapor Deposition: Preprint

Research output: Contribution to conferencePaper


We have improved the quality of our narrow-bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV, having a photoresponse equal to or better than our plasma-enhanced CVD-grown alloys. We enhanced the transport properties - as measured by the photoconductivityfrequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale, as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity, while photoluminescence showedan order of magnitude increase in defect density for a similar change in the process.
Original languageAmerican English
Number of pages22
StatePublished - 2002
EventSecond International Conference on Cat-CVD (Hot-Wire CVD) Process - Denver, Colorado
Duration: 10 Sep 200213 Sep 2002


ConferenceSecond International Conference on Cat-CVD (Hot-Wire CVD) Process
CityDenver, Colorado

NREL Publication Number

  • NREL/CP-520-33142


  • a-SiGe:H
  • alloy
  • germanium (Ge)
  • hot-wire chemical vapor deposition (HWCVD)
  • photoluminescence
  • photoresponses
  • PV
  • small angle x-ray
  • transport properties


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