Abstract
We have improved the quality of our narrow-bandgap a-SiGe:H grown by hot-wire chemical vapor deposition (HWCVD) by decreasing our W filament diameter and our substrate temperature. We now grow a-SiGe:H with Tauc bandgaps below 1.5 eV, having a photoresponse equal to or better than our plasma-enhanced CVD-grown alloys. We enhanced the transport properties - as measured by the photoconductivityfrequency mixing technique - relative to previous HWCVD results. These improved alloys do not necessarily show an improvement in the degree of structural heterogeneity on the nanometer scale, as measured by small-angle X-ray scattering. Decreasing both the filament temperature and substrate temperature produced a film with relatively low structural heterogeneity, while photoluminescence showedan order of magnitude increase in defect density for a similar change in the process.
| Original language | American English |
|---|---|
| Number of pages | 22 |
| State | Published - 2002 |
| Event | Second International Conference on Cat-CVD (Hot-Wire CVD) Process - Denver, Colorado Duration: 10 Sep 2002 → 13 Sep 2002 |
Conference
| Conference | Second International Conference on Cat-CVD (Hot-Wire CVD) Process |
|---|---|
| City | Denver, Colorado |
| Period | 10/09/02 → 13/09/02 |
NREL Publication Number
- NREL/CP-520-33142
Keywords
- a-SiGe:H
- alloy
- germanium (Ge)
- hot-wire chemical vapor deposition (HWCVD)
- photoluminescence
- photoresponses
- PV
- small angle x-ray
- transport properties