Abstract
A variety of surface analytical techniques have been employed in an attempt to correlate the chemistry of InP native oxides with electrical interface instabilities observed in InP MIS devices. The native oxides examined were predominantly InPO//4 but upon closer examination had small amounts of In//2O//3 incorporated into the outer oxide surface. The band gap of InPO//4 was estimated to be about 4. 5 ev, although several observations indicate that this may be only a lower limit. It is suggested that tunneling of electrons from InP through the InPO//4 into In//2O//3 may account for electrical interface instabilities observed in InP MIS devices.
Original language | American English |
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Pages (from-to) | 778-781 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 1 |
Issue number | 3 |
DOIs | |
State | Published - 1983 |
Externally published | Yes |
Event | Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: 25 Jan 1983 → 27 Jan 1983 |
Bibliographical note
Work performed by Hughes Research Laboratories, Malibu, California; Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado, and Solar Energy Research Institute, Golden, ColoradoNREL Publication Number
- ACNR/JA-213-4083