Nature of Defects in Heavily Te-Doped GaAs

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)475-478
    Number of pages4
    JournalRevue de Physique Appliquee
    Issue number8
    StatePublished - 1983

    Bibliographical note

    Work performed by Solar Energy Research Institute, Golden, Colorado; Laboratoire d'Optique Electronique du CNRS, Toulouse, France; Laboratoire Physique de Solide ct Energie Solaire, CNRS, Valbonne, France

    NREL Publication Number

    • ACNR/JA-212-6247

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