Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

Dana Sulas-Kern; Helio Moutinho; Tristan Erion-Lorico; Steve Johnston

doi:10.1109/PVSC48317.2022.9938799

Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

Dana Sulas-Kern
, Helio Moutinho
, Tristan Erion-Lorico
, Steve Johnston

Materials Science

DNV

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

Original language	American English
Pages	200-203
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC48317.2022.9938799 https://doi.org/10.1109/PVSC48317.2022.9938799
State	Published - 2022
Event	49th IEEE Photovoltaics Specialists Conference, PVSC 2022 - Philadelphia, United States Duration: 5 Jun 2022 → 10 Jun 2022

Conference

Conference	49th IEEE Photovoltaics Specialists Conference, PVSC 2022
Country/Territory	United States
City	Philadelphia
Period	5/06/22 → 10/06/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

NLR Publication Number

NREL/CP-5K00-85068

Keywords

degradation
metallization
photovoltaics
silicon

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Sulas-Kern, D., Moutinho, H., Erion-Lorico, T., & Johnston, S. (2022). Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules. 200-203. Paper presented at 49th IEEE Photovoltaics Specialists Conference, PVSC 2022, Philadelphia, United States. https://doi.org/10.1109/PVSC48317.2022.9938799, https://doi.org/10.1109/PVSC48317.2022.9938799

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abstract = "We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.",

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Sulas-Kern, D, Moutinho, H, Erion-Lorico, T & Johnston, S 2022, 'Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules', Paper presented at 49th IEEE Photovoltaics Specialists Conference, PVSC 2022, Philadelphia, United States, 5/06/22 - 10/06/22 pp. 200-203. https://doi.org/10.1109/PVSC48317.2022.9938799, https://doi.org/10.1109/PVSC48317.2022.9938799

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AU - Johnston, Steve

PY - 2022

Y1 - 2022

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AB - We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

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KW - metallization

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Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

Abstract

Conference

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Keywords

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