Near-Field Transport Imaging Application of Photovoltaic Materials

Chuanxiao Xiao, Chun Sheng Jiang, John Moseley, John Simon, Kevin Schulte, Aaron Ptak, Steven Johnston, Mowafak Al-Jassim, Nancy Haegel, Helio Moutinho, Brian Gorman

Research output: Contribution to conferencePaper


We applied a novel analytical technique-nearfield transport imaging (TI)-to photovoltaic materials for charge-carrier transport mapping in nanometer-scale. We measured the diffusion length of a well-controlled gallium arsenide (GaAs) thin-film samples and it agrees well with the results calculated by time-resolved photoluminescence. We report for the first time on TI experiments on thin-film cadmium telluride, including the effective carrier diffusion length, as well as the first near-field imaging of the effect of a single small defect on carrier transport and recombination in a GaAs sample. Furthermore, by changing the scanning setup, we were able to do near-field cathodoluminescence (CL), and correlated the results with standard CL results. The TI technique shows great potential for high spatial resolution mapping transport properties in solar cell materials.
Original languageAmerican English
Number of pages4
StatePublished - 2018
Event2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017


Conference2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
CityWashington, D.C.

NREL Publication Number

  • NREL/CP-5K00-67780


  • effective diffusion length
  • nanometer-scale
  • near-field
  • single defect
  • transport imaging


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