Near-Field Transport Imaging Application of Photovoltaic Materials

Chuanxiao Xiao; Chun Sheng Jiang; John Moseley; John Simon; Kevin Schulte; Aaron Ptak; Steven Johnston; Mowafak Al-Jassim; Nancy Haegel; Helio Moutinho; Brian Gorman

doi:10.1109/PVSC.2017.8366352

Near-Field Transport Imaging Application of Photovoltaic Materials

Chuanxiao Xiao, Chun Sheng Jiang, John Moseley, John Simon, Kevin Schulte, Aaron Ptak, Steven Johnston, Mowafak Al-Jassim, Nancy Haegel, Helio Moutinho, Brian Gorman

Colorado School of Mines

Research output: Contribution to conference › Paper

Abstract

We applied a novel analytical technique-nearfield transport imaging (TI)-to photovoltaic materials for charge-carrier transport mapping in nanometer-scale. We measured the diffusion length of a well-controlled gallium arsenide (GaAs) thin-film samples and it agrees well with the results calculated by time-resolved photoluminescence. We report for the first time on TI experiments on thin-film cadmium telluride, including the effective carrier diffusion length, as well as the first near-field imaging of the effect of a single small defect on carrier transport and recombination in a GaAs sample. Furthermore, by changing the scanning setup, we were able to do near-field cathodoluminescence (CL), and correlated the results with standard CL results. The TI technique shows great potential for high spatial resolution mapping transport properties in solar cell materials.

Original language	American English
Pages	62-65
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2017.8366352
State	Published - 2018
Event	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
City	Washington, D.C.
Period	25/06/17 → 30/06/17

NREL Publication Number

NREL/CP-5K00-67780

Keywords

effective diffusion length
nanometer-scale
near-field
single defect
transport imaging

Access to Document

10.1109/PVSC.2017.8366352

Cite this

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title = "Near-Field Transport Imaging Application of Photovoltaic Materials",

abstract = "We applied a novel analytical technique-nearfield transport imaging (TI)-to photovoltaic materials for charge-carrier transport mapping in nanometer-scale. We measured the diffusion length of a well-controlled gallium arsenide (GaAs) thin-film samples and it agrees well with the results calculated by time-resolved photoluminescence. We report for the first time on TI experiments on thin-film cadmium telluride, including the effective carrier diffusion length, as well as the first near-field imaging of the effect of a single small defect on carrier transport and recombination in a GaAs sample. Furthermore, by changing the scanning setup, we were able to do near-field cathodoluminescence (CL), and correlated the results with standard CL results. The TI technique shows great potential for high spatial resolution mapping transport properties in solar cell materials.",

keywords = "effective diffusion length, nanometer-scale, near-field, single defect, transport imaging",

author = "Chuanxiao Xiao and Jiang, {Chun Sheng} and John Moseley and John Simon and Kevin Schulte and Aaron Ptak and Steven Johnston and Mowafak Al-Jassim and Nancy Haegel and Helio Moutinho and Brian Gorman",

year = "2018",

doi = "10.1109/PVSC.2017.8366352",

language = "American English",

pages = "62--65",

note = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ; Conference date: 25-06-2017 Through 30-06-2017",

}

TY - CONF

T1 - Near-Field Transport Imaging Application of Photovoltaic Materials

AU - Xiao, Chuanxiao

AU - Jiang, Chun Sheng

AU - Moseley, John

AU - Simon, John

AU - Schulte, Kevin

AU - Ptak, Aaron

AU - Johnston, Steven

AU - Al-Jassim, Mowafak

AU - Haegel, Nancy

AU - Moutinho, Helio

AU - Gorman, Brian

PY - 2018

Y1 - 2018

N2 - We applied a novel analytical technique-nearfield transport imaging (TI)-to photovoltaic materials for charge-carrier transport mapping in nanometer-scale. We measured the diffusion length of a well-controlled gallium arsenide (GaAs) thin-film samples and it agrees well with the results calculated by time-resolved photoluminescence. We report for the first time on TI experiments on thin-film cadmium telluride, including the effective carrier diffusion length, as well as the first near-field imaging of the effect of a single small defect on carrier transport and recombination in a GaAs sample. Furthermore, by changing the scanning setup, we were able to do near-field cathodoluminescence (CL), and correlated the results with standard CL results. The TI technique shows great potential for high spatial resolution mapping transport properties in solar cell materials.

AB - We applied a novel analytical technique-nearfield transport imaging (TI)-to photovoltaic materials for charge-carrier transport mapping in nanometer-scale. We measured the diffusion length of a well-controlled gallium arsenide (GaAs) thin-film samples and it agrees well with the results calculated by time-resolved photoluminescence. We report for the first time on TI experiments on thin-film cadmium telluride, including the effective carrier diffusion length, as well as the first near-field imaging of the effect of a single small defect on carrier transport and recombination in a GaAs sample. Furthermore, by changing the scanning setup, we were able to do near-field cathodoluminescence (CL), and correlated the results with standard CL results. The TI technique shows great potential for high spatial resolution mapping transport properties in solar cell materials.

KW - effective diffusion length

KW - nanometer-scale

KW - near-field

KW - single defect

KW - transport imaging

U2 - 10.1109/PVSC.2017.8366352

DO - 10.1109/PVSC.2017.8366352

M3 - Paper

SP - 62

EP - 65

T2 - 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Y2 - 25 June 2017 through 30 June 2017

ER -

Near-Field Transport Imaging Application of Photovoltaic Materials

Abstract

Conference

NREL Publication Number

Keywords

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