New Approaches for High Efficiency Solar Cells: Final Report

    Research output: NRELSubcontract Report


    This report summarizes the activities carried out in this subcontract. These activities cover growing GaAs, AlGaAs, and InGaP by atomic- layer epitaxy (ALE) at fairly low growth temperatures; using ALE to achieve high levels of doping both n-type and p-type required for tunnel junctions in the cascade solar cell structures; and studying the properties of AlGaAs/InGaP and AlGaAs/GaAs tunneljunctions in stacked solar cell structures. The effect of these tunnel junctions on the performance of stacked solar cells was studied at different temperatures and different solar fluences. Researchers also studied the effect of different types of back-surface fields, both p/n and n/p GaInP solar cell structures, and their potential for window-layer applications. Parts of these activities werecarried out in close cooperation with Dr. Mike Timmons of the Research Triangle Institute.
    Original languageAmerican English
    Number of pages120
    StatePublished - 1997

    Bibliographical note

    Work performed by North Carolina State University, Raleigh, North Carolina

    NREL Publication Number

    • NREL/SR-520-23266


    • atomic-layer epitaxy
    • back surface fields (BSF)
    • high-efficiency solar cells
    • photovoltaics (PV)
    • tunnel junctions (TJ)
    • window layer applications


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