New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

Sarah Kurtz

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

Materials Science

Research output: Contribution to conference › Paper

Abstract

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Original language	American English
Number of pages	5
State	Published - 2005
Event	2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 7 Nov 2005 → 10 Nov 2005

Conference

Conference	2005 DOE Solar Energy Technologies Program Review Meeting
City	Denver, Colorado
Period	7/11/05 → 10/11/05

Bibliographical note

Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

NREL Publication Number

NREL/CP-520-38997

Keywords

NREL
photovoltaics (PV)
PV
solar
tandem solar cells
terrestrial concentrator system

Access to Document

https://www.nrel.gov/docs/fy06osti/38997.pdf

Cite this

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title = "New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems",

abstract = "GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.",

keywords = "NREL, photovoltaics (PV), PV, solar, tandem solar cells, terrestrial concentrator system",

author = "Sarah Kurtz",

note = "Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557); 2005 DOE Solar Energy Technologies Program Review Meeting ; Conference date: 07-11-2005 Through 10-11-2005",

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language = "American English",

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TY - CONF

T1 - New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

AU - Kurtz, Sarah

N1 - Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

PY - 2005

Y1 - 2005

N2 - GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

AB - GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

KW - NREL

KW - photovoltaics (PV)

KW - PV

KW - solar

KW - tandem solar cells

KW - terrestrial concentrator system

M3 - Paper

T2 - 2005 DOE Solar Energy Technologies Program Review Meeting

Y2 - 7 November 2005 through 10 November 2005

ER -

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this