New Hydrogen Distribution in a-Si:H: An NMR Study

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Abstract

Hot-filament-assisted CVD deposited a-Si:H with low H concentration and low defect density has been examined by 1H NMR. It is demonstrated for the first time that H microstructures can be altered significantly in device quality a-Si:H films. In the present films, large H clusters account for 90% of the 2-3 at. % H atoms, with the remaining H more dispersed, but still aggregated in a small volumefraction of material. These results suggest that an ideal a-Si:H network with low defect density and high structural stability may not necessarily be homogeneous.
Original languageAmerican English
Pages (from-to)2049-2052
Number of pages4
JournalPhysical Review Letters
Volume77
Issue number10
DOIs
StatePublished - 1996

NREL Publication Number

  • NREL/JA-520-22916

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