Abstract
First-principles study of BO2 complex in B-doped Czochralski silicon (Cz-Si) reveals a novel, self-trapping-enhanced carrier recombination mechanism, in sharp contrasts to the standard fixed-level Shockley-Read-Hall theory for carrier recombination. We found that an O2 dimer, distant from any B, would cause only weak carrier recombination under illumination -- only enough to drive its diffusionto find B and form the BO2 complexes. Surprisingly, BO2 and O2 produce nearly identical defect gap states. Despite this, recombination at BO2 is substantially faster than that at O2, because the charge state of the latter inhibits hole capture, the key step for such recombination.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 7 Nov 2005 → 10 Nov 2005 |
Conference
| Conference | 2005 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 7/11/05 → 10/11/05 |
Bibliographical note
Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)NREL Publication Number
- NREL/CP-590-39021
Keywords
- boron-oxygen complexes
- non-radiative recombination
- NREL
- photovoltaics (PV)
- PV
- silicon
- solar