Abstract
A new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon (a-Si:H) was recently proposed. Carrier recombination excites H from deep Si-H bonds into a mobile configuration, leaving a threefold-coordinated Si dangling bond (DB) defect at the site of excitation - a process long suspected to be an element of metastable DB production. Normally, mobile H arerecaptured at DB defects and neither metastability nor net DB production results. However, when two mobile H collide, they form a metastable two-hydrogen complex and leave two spatially-uncorrelated Staebler-Wronski DBs. The model leads to differential equations describing the evolution of the mobile H and DB densities and a variety of new predictions. New directions for improving the stabilityof a-Si:H are discussed.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 1998 |
| Event | National Center for Photovoltaics Program Review Meeting - Denver, Colorado Duration: 8 Sep 1998 → 11 Sep 1998 |
Conference
| Conference | National Center for Photovoltaics Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 8/09/98 → 11/09/98 |
NREL Publication Number
- NREL/CP-520-25655