New Polytypoid SnO2(ZnO:Sn)m Nanowire: Characterization and Calculation of its Electronic Structure

Baobao Cao, Tingting Shi, Shijian Zheng, Yumi H. Ikuhara, Weilie Zhou, David Wood, Mowafak Al-Jassim, Yanfa Yan

Research output: Contribution to journalArticlepeer-review

13 Scopus Citations

Abstract

A new SnO 2(ZnO:Sn) m polytypoid nanowire has been synthesized through a two-step chemical vapor deposition (CVD) method. Cs-corrected scanning transmission electron microscopy (STEM) studies indicate the crystal structure consists of an alternating stack of a Sn-O octahedral layer and a (Sn/Zn)-O wurtzite slab. First-principles density-functional theory (DFT) calculations suggest Sn atoms in the Sn-doped ZnO slabs have both 4- and 6-fold coordination, forming an inversion boundary of polarity. The SnO 2(ZnO:Sn) m nanowires may exhibit unique anisotropic electronic properties: poor conductivity along the wire axis, but metallic conductivity along the diametrical directions according to the calculations.

Original languageAmerican English
Pages (from-to)5009-5013
Number of pages5
JournalJournal of Physical Chemistry C
Volume116
Issue number8
DOIs
StatePublished - 1 Mar 2012

NREL Publication Number

  • NREL/JA-5200-54750

Keywords

  • chemical vapor deposition
  • crystal structure
  • nanowire

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