Abstract
A new SnO 2(ZnO:Sn) m polytypoid nanowire has been synthesized through a two-step chemical vapor deposition (CVD) method. Cs-corrected scanning transmission electron microscopy (STEM) studies indicate the crystal structure consists of an alternating stack of a Sn-O octahedral layer and a (Sn/Zn)-O wurtzite slab. First-principles density-functional theory (DFT) calculations suggest Sn atoms in the Sn-doped ZnO slabs have both 4- and 6-fold coordination, forming an inversion boundary of polarity. The SnO 2(ZnO:Sn) m nanowires may exhibit unique anisotropic electronic properties: poor conductivity along the wire axis, but metallic conductivity along the diametrical directions according to the calculations.
Original language | American English |
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Pages (from-to) | 5009-5013 |
Number of pages | 5 |
Journal | Journal of Physical Chemistry C |
Volume | 116 |
Issue number | 8 |
DOIs | |
State | Published - 1 Mar 2012 |
NREL Publication Number
- NREL/JA-5200-54750
Keywords
- chemical vapor deposition
- crystal structure
- nanowire