Abstract
We have measured the low temperature internal friction (Q-1) of amorphous silicon (a-Si) films. Electron-beam evaporation leads to the well-known temperature-independent Q0-1 plateau common to all amorphous solids. For hydrogenated amorphous silicon (a-Si:H) with about 1 at. percent H produced by hot wire chemical vapor deposition, however, the value of Q0-1 is over two hundred times smaller thanfor e-beam a-Si. This is the first observation of an amorphous solid without any significant low energy excitations. This finding offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.
| Original language | American English |
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| Pages | 191-196 |
| Number of pages | 6 |
| State | Published - 1997 |
| Event | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium - San Francisco, California Duration: 31 Mar 1997 → 4 Apr 1997 |
Conference
| Conference | Amorphous and Microcrystalline Silicon Technology 1997: Materials Research Society Symposium |
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| City | San Francisco, California |
| Period | 31/03/97 → 4/04/97 |
NREL Publication Number
- NREL/CP-520-24537