New Technique for the Determination of Mott-Schottky Parameters for Semiconductor/Electrolyte Junctions from Admittance Measurements and Equivalent Circuit Models

New Technique for the Determination of Mott-Schottky Parameters for Semiconductor/Electrolyte Junctions from Admittance Measurements and Equivalent Circuit Models

Research output: Contribution to conference › Paper

Original language	American English
Pages	444-455
Number of pages	12
State	Published - 1982
Event	Electrochemical Society Meeting - Denver, Colorado Duration: 11 Oct 1981 → 16 Oct 1981

Conference

Conference	Electrochemical Society Meeting
City	Denver, Colorado
Period	11/10/81 → 16/10/81

Bibliographical note

Work performed by Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado

NREL Publication Number

ACNR/CP-4820

Cite this

@conference{93b59d9566c64b359a054c92ff82da0c,

title = "New Technique for the Determination of Mott-Schottky Parameters for Semiconductor/Electrolyte Junctions from Admittance Measurements and Equivalent Circuit Models",

author = "NREL",

note = "Work performed by Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado; Electrochemical Society Meeting ; Conference date: 11-10-1981 Through 16-10-1981",

year = "1982",

language = "American English",

pages = "444--455",

}

TY - CONF

T1 - New Technique for the Determination of Mott-Schottky Parameters for Semiconductor/Electrolyte Junctions from Admittance Measurements and Equivalent Circuit Models

AU - NREL, null

N1 - Work performed by Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado

PY - 1982

Y1 - 1982

M3 - Paper

SP - 444

EP - 455

T2 - Electrochemical Society Meeting

Y2 - 11 October 1981 through 16 October 1981

ER -