Abstract
Thin films of CuGaSe2 and Cu(In,Ga)Se2 were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n+/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60 ...deg..C. The resulting four-terminal device is a non-mechanically stacked,two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (h = 3.7%, Voc = 1.1 V [AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.
| Original language | American English |
|---|---|
| Number of pages | 7 |
| State | Published - 2002 |
| Event | 29th IEEE PV Specialists Conference - New Orleans, Louisiana Duration: 20 May 2002 → 24 May 2002 |
Conference
| Conference | 29th IEEE PV Specialists Conference |
|---|---|
| City | New Orleans, Louisiana |
| Period | 20/05/02 → 24/05/02 |
Bibliographical note
Prepared for the 29th IEEE PV Specialists Conference, 20-24 May 2002, New Orleans, LouisianaNREL Publication Number
- NREL/CP-520-31440
Keywords
- electron probe microanalysis (EPMA)
- four-terminal device
- high-temperature-sensitive layers
- PV
- scanning electron microscopy (SEM)
- tandem solar cells
- thin films
- three-stage process