New, Ultrafast Technique for Mapping Dislocation Density in Large-Area, Single-Crystal and Multicrystalline Si Wafers: Paper No. 1210-Q01-02

New, Ultrafast Technique for Mapping Dislocation Density in Large-Area, Single-Crystal and Multicrystalline Si Wafers: Paper No. 1210-Q01-02

Research output: Contribution to conference › Paper

Original language	American English
Pages	15-20
Number of pages	6
State	Published - 2010
Event	2009 Materials Research Society Symposium - Boston, Massachusetts Duration: 29 Nov 2009 → 3 Dec 2009

Conference

Conference	2009 Materials Research Society Symposium
City	Boston, Massachusetts
Period	29/11/09 → 3/12/09

NREL Publication Number

NREL/CP-5200-46255

Keywords

dislocation density
optical scattering
solar cells

Cite this

@conference{0a2184e996d44702bffb1e3ead4ba2c2,

title = "New, Ultrafast Technique for Mapping Dislocation Density in Large-Area, Single-Crystal and Multicrystalline Si Wafers: Paper No. 1210-Q01-02",

keywords = "dislocation density, optical scattering, solar cells",

author = "NREL",

year = "2010",

language = "American English",

pages = "15--20",

note = "2009 Materials Research Society Symposium ; Conference date: 29-11-2009 Through 03-12-2009",

}