Abstract
A novel visible-light-absorbing dilute alloy, Ga(Sbx)N 1-x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen production. Significant bandgap reduction of GaN, from 3.4 eV to 1.8 eV, is observed, with a low (2%) incorporation of antimonide, and the lattice expansion is in agreement with our first-principles calculations. The band edges of Ga(Sbx)N1-x are found to straddle the water redox potentials showing excellent suitability for solar water splitting.
Original language | American English |
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Pages (from-to) | 2878-2882 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 18 |
DOIs | |
State | Published - 2014 |
NREL Publication Number
- NREL/JA-5900-62048
Keywords
- density functional theory (DFT)
- GaN alloys
- photoelectrochemical water splitting
- solar fuels