Abstract
A novel visible-light-absorbing dilute alloy, Ga(Sbx)N 1-x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen production. Significant bandgap reduction of GaN, from 3.4 eV to 1.8 eV, is observed, with a low (2%) incorporation of antimonide, and the lattice expansion is in agreement with our first-principles calculations. The band edges of Ga(Sbx)N1-x are found to straddle the water redox potentials showing excellent suitability for solar water splitting.
| Original language | American English |
|---|---|
| Pages (from-to) | 2878-2882 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 26 |
| Issue number | 18 |
| DOIs | |
| State | Published - 2014 |
NLR Publication Number
- NREL/JA-5900-62048
Keywords
- density functional theory (DFT)
- GaN alloys
- photoelectrochemical water splitting
- solar fuels