Next Generation Thin Films for Photovoltaics: InGaAsN

Research output: Contribution to conferencePaper

Abstract

A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen (approx. 2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogenconcentrations, InGaAsN can be lattice matched to GaAs.
Original languageAmerican English
Pages55-70
Number of pages16
StatePublished - 1999
EventWorkshop on Basic Research Opportunities in Photovoltaics: Workshop: in Conjunction with the 195th Meeting of the Electrochemical Society - Seattle, Washington
Duration: 3 May 19993 May 1999

Conference

ConferenceWorkshop on Basic Research Opportunities in Photovoltaics: Workshop: in Conjunction with the 195th Meeting of the Electrochemical Society
CitySeattle, Washington
Period3/05/993/05/99

NREL Publication Number

  • NREL/CP-520-27174

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