Abstract
A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen (approx. 2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogenconcentrations, InGaAsN can be lattice matched to GaAs.
| Original language | American English |
|---|---|
| Pages | 55-70 |
| Number of pages | 16 |
| State | Published - 1999 |
| Event | Workshop on Basic Research Opportunities in Photovoltaics: Workshop: in Conjunction with the 195th Meeting of the Electrochemical Society - Seattle, Washington Duration: 3 May 1999 → 3 May 1999 |
Conference
| Conference | Workshop on Basic Research Opportunities in Photovoltaics: Workshop: in Conjunction with the 195th Meeting of the Electrochemical Society |
|---|---|
| City | Seattle, Washington |
| Period | 3/05/99 → 3/05/99 |
NREL Publication Number
- NREL/CP-520-27174