Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint

    Research output: Contribution to conferencePaper


    A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen (~2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations,InGaAsN can be lattice matched to GaAs.
    Original languageAmerican English
    Number of pages18
    StatePublished - 1999
    EventElectrochemical Society International Symposium - Seattle, Washington
    Duration: 1 May 19991 May 1999


    ConferenceElectrochemical Society International Symposium
    CitySeattle, Washington

    NREL Publication Number

    • NREL/CP-520-29589


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