Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint

Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint

NREL

Research output: Contribution to conference › Paper

Abstract

A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen (~2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations,InGaAsN can be lattice matched to GaAs.

Original language	American English
Number of pages	18
State	Published - 1999
Event	Electrochemical Society International Symposium - Seattle, Washington Duration: 1 May 1999 → 1 May 1999

Conference

Conference	Electrochemical Society International Symposium
City	Seattle, Washington
Period	1/05/99 → 1/05/99

NLR Publication Number

NREL/CP-520-29589

Access to Document

https://www.nrel.gov/docs/fy99osti/29589.pdf

Cite this

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title = "Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint",

abstract = "A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40\%. The introduction of small amounts of nitrogen (\textasciitilde{}2\%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2\% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations,InGaAsN can be lattice matched to GaAs.",

author = "NREL",

year = "1999",

language = "American English",

note = "Electrochemical Society International Symposium ; Conference date: 01-05-1999 Through 01-05-1999",

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T1 - Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint

AU - NREL, null

PY - 1999

Y1 - 1999

N2 - A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen (~2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations,InGaAsN can be lattice matched to GaAs.

AB - A new semiconductor alloy system, InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40%. The introduction of small amounts of nitrogen (~2%) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2% nitrogen content! With the appropriate ratio of indium to nitrogen concentrations,InGaAsN can be lattice matched to GaAs.

M3 - Paper

T2 - Electrochemical Society International Symposium

Y2 - 1 May 1999 through 1 May 1999

ER -

Next Generation Thin Films for Photovoltaics: InGaAsN; Preprint

Abstract

Conference

NLR Publication Number

Access to Document

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Cite this