Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

Alexander Marshall, Karine Florent, Astha Tapriya, Benjamin G. Lee, Santosh K. Kurinec, David L. Young

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations

Abstract

Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.

Original languageAmerican English
Pages2479-2482
Number of pages4
DOIs
StatePublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period5/06/1610/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

  • NREL/CP-5J00-67953

Keywords

  • conductivity
  • nickel alloys
  • optical reflection
  • photovoltaic cells
  • silicides
  • silicon

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