Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

Alexander Marshall; Karine Florent; Astha Tapriya; Benjamin G. Lee; Santosh K. Kurinec; David L. Young

doi:10.1109/PVSC.2016.7750089

Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

Alexander Marshall, Karine Florent, Astha Tapriya, Benjamin G. Lee, Santosh K. Kurinec, David L. Young

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO₂/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied V_oc values close to 700 mV and contact resistivities below 10 mohm-cm² have been achieved in NiSi/poly-Si:P/SiO₂/c-Si contacts.

Original language	American English
Pages	2479-2482
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2016.7750089 https://doi.org/10.1109/PVSC.2016.7750089
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/CP-5J00-67953

Keywords

conductivity
nickel alloys
optical reflection
photovoltaic cells
silicides
silicon

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Marshall, A., Florent, K., Tapriya, A., Lee, B. G., Kurinec, S. K., & Young, D. L. (2016). Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells. 2479-2482. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7750089, https://doi.org/10.1109/PVSC.2016.7750089

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abstract = "Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.",

keywords = "conductivity, nickel alloys, optical reflection, photovoltaic cells, silicides, silicon",

author = "Alexander Marshall and Karine Florent and Astha Tapriya and Lee, {Benjamin G.} and Kurinec, {Santosh K.} and Young, {David L.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

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doi = "10.1109/PVSC.2016.7750089",

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Marshall, A, Florent, K, Tapriya, A, Lee, BG, Kurinec, SK & Young, DL 2016, 'Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 2479-2482. https://doi.org/10.1109/PVSC.2016.7750089, https://doi.org/10.1109/PVSC.2016.7750089

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AU - Marshall, Alexander

AU - Florent, Karine

AU - Tapriya, Astha

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AU - Young, David L.

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AB - Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.

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KW - nickel alloys

KW - optical reflection

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ER -

Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

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Conference

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Keywords

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