Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

Alexander Marshall; Karine Florent; Astha Tapriya; Benjamin G. Lee; Santosh K. Kurinec; David L. Young

doi:10.1109/PVSC.2016.7750089

Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

Alexander Marshall
, Karine Florent
, Astha Tapriya
, Benjamin G. Lee
, Santosh K. Kurinec
, David L. Young

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO₂/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied V_oc values close to 700 mV and contact resistivities below 10 mohm-cm² have been achieved in NiSi/poly-Si:P/SiO₂/c-Si contacts.

Original language	American English
Pages	2479-2482
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2016.7750089 https://doi.org/10.1109/PVSC.2016.7750089
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NLR Publication Number

NREL/CP-5J00-67953

Keywords

conductivity
nickel alloys
optical reflection
photovoltaic cells
silicides
silicon

Access to Document

Cite this

Marshall, A., Florent, K., Tapriya, A., Lee, B. G., Kurinec, S. K., & Young, D. L. (2016). Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells. 2479-2482. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7750089, https://doi.org/10.1109/PVSC.2016.7750089

@conference{225f1e4b77b04cf4b4553551d8d8625f,

title = "Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells",

abstract = "Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.",

keywords = "conductivity, nickel alloys, optical reflection, photovoltaic cells, silicides, silicon",

author = "Alexander Marshall and Karine Florent and Astha Tapriya and Lee, \{Benjamin G.\} and Kurinec, \{Santosh K.\} and Young, \{David L.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750089",

language = "American English",

pages = "2479--2482",

}

Marshall, A, Florent, K, Tapriya, A, Lee, BG, Kurinec, SK & Young, DL 2016, 'Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 2479-2482. https://doi.org/10.1109/PVSC.2016.7750089, https://doi.org/10.1109/PVSC.2016.7750089

TY - CONF

T1 - Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

AU - Marshall, Alexander

AU - Florent, Karine

AU - Tapriya, Astha

AU - Lee, Benjamin G.

AU - Kurinec, Santosh K.

AU - Young, David L.

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.

AB - Passivated tunneling contacts offer promise for applications in Interdigitated Back Passivated Contact (IBPC) high efficiency silicon solar cells. Metallization of these contacts remains a key research topic. This paper investigates NiSi/poly-Si/SiO2/c-Si passivated contacts using photoluminescence and contact resistivity measurements. An amorphous Si interlayer between the NiSi and poly-Si is observed to improve passivation, decreasing recombination. The overall recombination loss has a linear trend with the NiSi thickness. Implied Voc values close to 700 mV and contact resistivities below 10 mohm-cm2 have been achieved in NiSi/poly-Si:P/SiO2/c-Si contacts.

KW - conductivity

KW - nickel alloys

KW - optical reflection

KW - photovoltaic cells

KW - silicides

KW - silicon

UR - https://www.scopus.com/pages/publications/85003441528

U2 - 10.1109/PVSC.2016.7750089

DO - 10.1109/PVSC.2016.7750089

M3 - Paper

AN - SCOPUS:85003441528

SP - 2479

EP - 2482

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Nickel Silicide Metallization for Passivated Tunneling Contacts for Silicon Solar Cells

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this