Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1-xNx with x<0.03

J. D. Perkins; A. Mascarenhas; Yong Zhang; J. F. Geisz; D. J. Friedman; J. M. Olson; Sarah R. Kurtz

doi:10.1103/PhysRevLett.82.3312

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1-xNx with x<0.03

J. D. Perkins, A. Mascarenhas, Yong Zhang, J. F. Geisz, D. J. Friedman, J. M. Olson, Sarah R. Kurtz

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

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Abstract

We report electroreflectance spectra for a series of GaAs_1-xN_x samples with x < 0.03. For all samples, the fundamental band gap transition (E₀) and the transition from the spin-orbit split-off valence band (E₀ + Δ₀) are observed. For samples with x ≥ 0.008, an additional transition (E₊) is observed. With increasing nitrogen content, the increase in E₊ is linear in, and nearly equal to, the band gap reduction indicative of a nitrogen-induced level repulsion. The directly observed E₊ transition may arise from either a nitrogen-related resonant level or a disorder-activated indirect transition.

Original language	American English
Pages (from-to)	3312-3315
Number of pages	4
Journal	Physical Review Letters
Volume	82
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.82.3312 https://doi.org/10.1103/PhysRevLett.82.3312
State	Published - 1999

NREL Publication Number

NREL/JA-590-26570

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@article{c58f09a9562044078cd8e6a9fac967d0,

title = "Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1-xNx with x<0.03",

abstract = "We report electroreflectance spectra for a series of GaAs1-xNx samples with x < 0.03. For all samples, the fundamental band gap transition (E0) and the transition from the spin-orbit split-off valence band (E0 + Δ0) are observed. For samples with x ≥ 0.008, an additional transition (E+) is observed. With increasing nitrogen content, the increase in E+ is linear in, and nearly equal to, the band gap reduction indicative of a nitrogen-induced level repulsion. The directly observed E+ transition may arise from either a nitrogen-related resonant level or a disorder-activated indirect transition.",

author = "Perkins, {J. D.} and A. Mascarenhas and Yong Zhang and Geisz, {J. F.} and Friedman, {D. J.} and Olson, {J. M.} and Kurtz, {Sarah R.}",

year = "1999",

doi = "10.1103/PhysRevLett.82.3312",

language = "American English",

volume = "82",

pages = "3312--3315",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1-xNx with x<0.03

AU - Perkins, J. D.

AU - Mascarenhas, A.

AU - Zhang, Yong

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Olson, J. M.

AU - Kurtz, Sarah R.

PY - 1999

Y1 - 1999

N2 - We report electroreflectance spectra for a series of GaAs1-xNx samples with x < 0.03. For all samples, the fundamental band gap transition (E0) and the transition from the spin-orbit split-off valence band (E0 + Δ0) are observed. For samples with x ≥ 0.008, an additional transition (E+) is observed. With increasing nitrogen content, the increase in E+ is linear in, and nearly equal to, the band gap reduction indicative of a nitrogen-induced level repulsion. The directly observed E+ transition may arise from either a nitrogen-related resonant level or a disorder-activated indirect transition.

AB - We report electroreflectance spectra for a series of GaAs1-xNx samples with x < 0.03. For all samples, the fundamental band gap transition (E0) and the transition from the spin-orbit split-off valence band (E0 + Δ0) are observed. For samples with x ≥ 0.008, an additional transition (E+) is observed. With increasing nitrogen content, the increase in E+ is linear in, and nearly equal to, the band gap reduction indicative of a nitrogen-induced level repulsion. The directly observed E+ transition may arise from either a nitrogen-related resonant level or a disorder-activated indirect transition.

UR - http://www.scopus.com/inward/record.url?scp=0032613811&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.82.3312

DO - 10.1103/PhysRevLett.82.3312

M3 - Article

AN - SCOPUS:0032613811

SN - 0031-9007

VL - 82

SP - 3312

EP - 3315

JO - Physical Review Letters

JF - Physical Review Letters

IS - 16

ER -

Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs1-xNx with x<0.03

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