Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena

D. L. Young, J. F. Geisz, T. J. Coutts

Research output: Contribution to journalArticlepeer-review

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Abstract

The nitrogen-induced decrease of the electron effective mass in GaAs1-xnx thin films measured by thermomagnetic transport phenomena was investigated. The density of states, effective-mass values which were calculated from the transport data decrease from 0.084me to 0.029me as x increased from 0 to 0.004. Carrier concentrations were calculated from the Hall coefficient using a Hall factor of 1.

Original languageAmerican English
Pages (from-to)1236-1238
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number8
DOIs
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-32870

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