Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena

D. L. Young; J. F. Geisz; T. J. Coutts

doi:10.1063/1.1554777

Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena

D. L. Young
, J. F. Geisz
, T. J. Coutts

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

59 Scopus Citations

Abstract

The nitrogen-induced decrease of the electron effective mass in GaAs_1-xn_x thin films measured by thermomagnetic transport phenomena was investigated. The density of states, effective-mass values which were calculated from the transport data decrease from 0.084m_e to 0.029m_e as x increased from 0 to 0.004. Carrier concentrations were calculated from the Hall coefficient using a Hall factor of 1.

Original language	American English
Pages (from-to)	1236-1238
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1063/1.1554777 https://doi.org/10.1063/1.1554777
State	Published - 2003

NLR Publication Number

NREL/JA-520-32870

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title = "Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena",

abstract = "The nitrogen-induced decrease of the electron effective mass in GaAs1-xnx thin films measured by thermomagnetic transport phenomena was investigated. The density of states, effective-mass values which were calculated from the transport data decrease from 0.084me to 0.029me as x increased from 0 to 0.004. Carrier concentrations were calculated from the Hall coefficient using a Hall factor of 1.",

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PY - 2003

Y1 - 2003

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AB - The nitrogen-induced decrease of the electron effective mass in GaAs1-xnx thin films measured by thermomagnetic transport phenomena was investigated. The density of states, effective-mass values which were calculated from the transport data decrease from 0.084me to 0.029me as x increased from 0 to 0.004. Carrier concentrations were calculated from the Hall coefficient using a Hall factor of 1.

UR - https://www.scopus.com/pages/publications/0037463252

U2 - 10.1063/1.1554777

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M3 - Article

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JF - Applied Physics Letters

IS - 8

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Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena

Abstract

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