Nitrogen-Induced Enhancement of the Free Electron Concentration in Sulfur Implanted GaNxAs1-x

K. M. Yu; W. Walukiewicz; W. Shan; J. Wu; J. W. Ager; E. E. Haller; J. F. Geisz; M. C. Ridgway

doi:10.1063/1.1320872

Nitrogen-Induced Enhancement of the Free Electron Concentration in Sulfur Implanted GaNxAs1-x

K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Ager, E. E. Haller, J. F. Geisz, M. C. Ridgway

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

32 Scopus Citations

Abstract

We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaN_xAs^1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×10¹⁸cm^-3 for implanted S concentration higher than 10¹⁹cm^-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.

Original language	American English
Pages (from-to)	2858-2860
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	18
DOIs	https://doi.org/10.1063/1.1320872 https://doi.org/10.1063/1.1320872
State	Published - 2000

NREL Publication Number

NREL/JA-590-29556

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title = "Nitrogen-Induced Enhancement of the Free Electron Concentration in Sulfur Implanted GaNxAs1-x",

abstract = "We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.",

author = "Yu, {K. M.} and W. Walukiewicz and W. Shan and J. Wu and Ager, {J. W.} and Haller, {E. E.} and Geisz, {J. F.} and Ridgway, {M. C.}",

year = "2000",

doi = "10.1063/1.1320872",

language = "American English",

volume = "77",

pages = "2858--2860",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Nitrogen-Induced Enhancement of the Free Electron Concentration in Sulfur Implanted GaNxAs1-x

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Wu, J.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Geisz, J. F.

AU - Ridgway, M. C.

PY - 2000

Y1 - 2000

N2 - We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.

AB - We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.

UR - http://www.scopus.com/inward/record.url?scp=0001644919&partnerID=8YFLogxK

U2 - 10.1063/1.1320872

DO - 10.1063/1.1320872

M3 - Article

AN - SCOPUS:0001644919

SN - 0003-6951

VL - 77

SP - 2858

EP - 2860

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Nitrogen-Induced Enhancement of the Free Electron Concentration in Sulfur Implanted GaNxAs1-x

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